APT2X61DC120J

APT2X61DC120J APT2X60DC120J ISOTOP® SiC Diode Power Module 2 2 3 1 4 Anti-Parallel 1 APT2X60DC120J VRRM = 1200V IF = 60A @ TC = 100°C 3 Application  Uninterruptible Power Supply (UPS)  Induction heating  Welding equipment  High speed rectifiers 4 Parallel APT2X61DC120J 3 2 4 1 Features  SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF  ISOTOP® Package (SOT-227)  Very low stray inductance  High level of integration Benefits  Outstanding performance at high frequency operation  Low losses  Low noise switching  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  RoHS Compliant ISOTOP Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 µs TC = 100°C TC = 25°C Max ratings Unit 1200 V 60 750 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–4 APT2X61_60DC120J – Rev 1 October, 2012 Absolute maximum ratings (per leg) APT2X61DC120J APT2X60DC120J All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics (per leg) Symbol Characteristic Test Conditions VF Diode Forward Voltage IRM Maximum Reverse Leakage Current QC Total Capacitive Charge C Total Capacitance Min Tj = 25°C IF = 60A Tj = 175°C Tj = 25°C VR = 1200V Tj = 175°C IF = 60A, VR = 600V di/dt =3000A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V Typ 1.6 2.3 192 336 Max 1.8 3.0 1200 6000 Unit V µA 240 nC 576 414 pF Thermal and package characteristics (per leg) Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient (IGBT & Diode) Min RMS Isolation Voltage, any terminal to case t =1 min, I isol