APT30D100BHBG

APT30D100BHBG

  • 厂商:

    ACTEL(微芯科技)

  • 封装:

    TO247

  • 描述:

    二极管阵列 1 对串联 1000 V 18A 通孔 TO-247-3

  • 数据手册
  • 价格&库存
APT30D100BHBG 数据手册
1000V 2x18A APT30D100BHB APT30D100BHBG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Output Rectifiers for Switchmode Power Supply • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular TO-247 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • Low Leakage Current • Increased System Power Density 1 2 -2 4 7 3 1 3 2 1 - Cathode 1 2 - Anode 1 Cathode 2 3 - Anode 2 All Ratings Per Leg: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VR Characteristic / Test Conditions APT30D100BHB(G) UNIT 1000 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 54°C, Duty Cycle = 0.5) 30 IF(AV) RMS Forward Current (Square wave, 50% duty) 42 IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) TJ,TSTG TL Amps 210 -55 to 175 Operating and StorageTemperature Range °C 300 Lead Temperature for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS VF Characteristic / Test Conditions Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 30A 1.9 2.3 IF = 60A 2.2 IF = 30A, TJ = 125°C 1.7 Volts VR = VR Rated 250 VR = VR Rated, TJ = 125°C 500 Microsemi Website - http://www.microsemi.com 32 UNIT μA pF 050-5964 Rev C 12-2011 Symbol APT30D100BHB(G) DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM trr IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C IF = 30A, diF/dt = -200A/μs VR = 667V, TC = 25°C Maximum Reverse Recovery Current Reverse Recovery Time Qrr IF = 30A, diF/dt = -200A/μs Reverse Recovery Charge IRRM trr VR = 667V, TC = 125°C Maximum Reverse Recovery Current Reverse Recovery Time Qrr IF = 30A, diF/dt = -1000A/μs Reverse Recovery Charge IRRM VR = 667V, TC = 125°C Maximum Reverse Recovery Current MIN TYP MAX - 29 - 290 - 670 - 5 - 390 ns - 2350 nC - 11 - 160 ns - 3500 nC - 38 Amps MIN TYP UNIT ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MAX RθJC Junction-to-Case Thermal Resistance 1.8 RθJA Junction-to-Ambient Thermal Resistance 40 WT Torque Package Weight oz 5.9 g 10 lb•in 1.1 N•m Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.7 1.20 Note: 0.80 P DM Z JC, THERMAL IMPEDANCE (°C/W) θ 2.00 0.5 0.3 t1 t2 0.40 t 0.1 0.05 0 10-5 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C SINGLE PULSE 10 -4 10 -3 10 -2 10-1 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 050-5964 Rev C 12-2011 °C/W 0.22 Maximum Mounting Torque 1.60 UNIT TYPICAL PERFORMANCE CURVES 90 trr, REVERSE RECOVERY TIME (nS) IF, FORWARD CURRENT (A) TJ= 150°C 70 60 TJ= 125°C 50 40 TJ= 25°C 30 20 10 0 0 0.5 1 1.5 2 2.5 60A R 5000 4000 30A 3000 15A 2000 1000 0 0 200 400 600 800 100 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.4 250 100 50 QRR 25 800 1000 60A R 30A 15A 25 20 15 10 5 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 35 20 15 5 0 600 10 0.2 0 400 30 25 0.4 200 T = 125°C J V = 667V 35 1.0 IRRM 0 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 40 30 tRR 15A 150 1.2 0.8 30A 200 0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 300 IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) T = 125°C J V = 667V R 60A 3 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 6000 0.6 T = 125°C J V = 667V 350 TJ= -55°C 80 APT30D100BHB(G) 400 100 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 0 Duty cycle = 0.5 TJ = 175°C 25 50 75 100 125 150 175 Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature 250 200 150 100 50 0 1 10 100 200 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 050-5964 Rev C 12-2011 CJ, JUNCTION CAPACITANCE (pF) 300 APT30D100BHB(G) Vr APT10035LLL diF /dt Adjus t +18V 0V D.U.T. 30μH trr/Q rr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF/dt - Rate of Diode Current Change Through Zero Crossing. 1 3 IRRM - Maximum Reverse Recovery Current 4 Zer o 4 trr - Reverse Recovery Time measured from zero crossing where 5 3 diode current goes from positive to negative, to the point at 2 which the straight line through IRRM and 0.25, IRRM passes through zero. 5 Qrr - Area Under the Curve Defined by IRRM and tRR. Figure 10. Diode Reverse Recovery Waveform Definition TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC Anode 1 / Cathode 2 20.80 (.819) 21.46 (.845) 3.55 (.140) 3.81 (.150) 4.50 (.177) Max . 0.40 (.016) 1.016 (.040) 050-5964 Rev C 12-2011 5.38 (.212) 6.20 (.244) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Cathode 1 Anode 1 / Cathode 2 Anode 2 0.25 I RRM
APT30D100BHBG 价格&库存

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