APT30GP60BDQ1G

APT30GP60BDQ1(G) 600V TYPICAL PERFORMANCE CURVES APT30GP60BDQ1 APT30GP60BDQ1G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 100 kHz operation @ 400V, 37A • Low Gate Charge • 200 kHz operation @ 400V, 24A • Ultrafast Tail Current shutoff • SSOA Rated G C E C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT30GP60BDQ1(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±20 I C1 Continuous Collector Current @ TC = 25°C 100 I C2 Continuous Collector Current @ TC = 110°C 49 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 120 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C 120A @ 600V Total Power Dissipation Watts 463 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C) 2.2 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C) 2.1 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 3 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 500 2 Gate-Emitter Leakage Current (VGE = ±20V) Volts µA 3000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Units nA 5-2005 MIN Rev A Characteristic / Test Conditions 050-7451 Symbol DYNAMIC CHARACTERISTICS Symbol APT30GP60BDQ1(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 tf f = 1 MHz 20 Gate Charge 7.5 VGE = 15V 90 TJ = 150°C, R G = 5Ω, VGE = 260 250 Inductive Switching (125°C) 18 VGE = 15V 85 RG = 5Ω 80 260 I C = 30A Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy 44 55 330 13 VCC =400V Eon1 µJ 335 6 Current Fall Time ns 46 TJ = +25°C Turn-off Delay Time nC 55 RG = 5Ω Current Rise Time V A 18 I C = 30A Turn-on Delay Time pF 120 13 5 UNIT 30 VCC = 400V 4 MAX 20 Inductive Switching (25°C) Current Fall Time Turn-off Switching Energy td(off) 295 15V, L = 100µH,VCE = 600V Turn-off Delay Time Eoff tr VGE = 0V, VCE = 25V VGE = 15V Turn-on Switching Energy (Diode) td(on) 3200 I C = 30A Current Rise Time Eon2 TYP Capacitance VCE = 300V Turn-on Delay Time Turn-on Switching Energy MIN TJ = +125°C ns µJ 510 6 520 750 TYP MAX THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case (IGBT) RθJC Junction to Case (DIODE) WT Package Weight MIN .27 1.35 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7451 Rev A 5-2005 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES IC, COLLECTOR CURRENT (A) 30 TJ = 25°C 20 TJ = 125°C 10 0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 160 TJ = -55°C 140 120 100 80 TJ = 25°C 60 40 TJ = 125°C 20 0 0 TJ = 125°C 10 FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST