APT30GP60BG

APT30GP60B APT30GP60S 600V B POWER MOS 7 IGBT ® A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7® IGBT provides a lower cost alternative to a Power G C MOSFET. • Low Conduction Loss • 100 kHz operation @ 400V, 37A • Low Gate Charge • 200 kHz operation @ 400V, 24A • Ultrafast Tail Current shutoff • SSOA rated MAXIMUM RATINGS Symbol TO -2 G C G E All Ratings: TC = 25°C unless otherwise specified. Parameter APT30GP60B_S 600 VGE Gate-Emitter Voltage ±20 Gate-Emitter Voltage Transient ±30 I C1 Continuous Collector Current @ TC = 25°C 100 I C2 Continuous Collector Current @ TC = 110°C 49 I CM Pulsed Collector Current PD TJ,TSTG TL E E Collector-Emitter Voltage SSOA S C VCES VGEM D3PAK 47 1 UNIT Volts Amps 120 @ TC = 25°C 120A @ 600V Switching Safe Operating Area @ TJ = 150°C 463 Total Power Dissipation Watts -55 to 150 Operating and Storage Junction Temperature Range °C 300 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C) 2.2 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C) 2.1 3 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 250 2 Gate-Emitter Leakage Current (VGE = ±20V) Volts µA 2500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT nA 9-2005 MIN Rev E Characteristic / Test Conditions 050-7400 Symbol APT30GP60B_S DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Qgc SSOA Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching SOA MIN TYP Capacitance 3200 VGE = 0V, VCE = 25V 295 f = 1 MHz 20 Gate Charge VGE = 15V 7.5 VCE = 300V 20 I C = 30A 30 TJ = 150°C, R G = 5Ω, VGE = MAX UNIT pF V 90 nC 120 A 15V, L = 100µH,VCE = 600V td(on) tr td(off) tf Turn-on Delay Time Current Rise Time 4 Eoff Turn-off Switching Energy td(on) Turn-on Delay Time Eon2 Eoff 250 13 VGE = 15V 84 Turn-on Switching Energy (Diode) 5 330 ns 80 R G = 5Ω 4 µJ 18 I C = 30A Current Fall Time Turn-off Switching Energy 335 Inductive Switching (125°C) VCC(Peak) = 400V Turn-off Delay Time Turn-on Switching Energy 260 TJ = +25°C 6 Current Rise Time ns 46 R G = 5Ω Turn-on Switching Energy (Diode) 5 Eon1 55 18 I C = 30A Eon2 tf VGE = 15V Current Fall Time Turn-on Switching Energy td(off) 13 Turn-off Delay Time Eon1 tr Inductive Switching (25°C) VCC(Peak) = 400V 260 TJ = +125°C 508 6 µJ 518 750 TYP MAX THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN RΘJC Junction to Case (IGBT) .27 RΘJC Junction to Case (DIODE) N/A Package Weight 5.90 WT UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 050-7400 Rev E 9-2005 APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PREFORMANCE CURVES 30 20 TC=25°C 10 TC=125°C 0 VGE, GATE-TO-EMITTER VOLTAGE (V) 140 120 100 80 TJ = 25°C TJ = 125°C 40 20 4 3.5 0 IC= 60A 2.5 IC= 30A 2 IC= 15A 1.5 1 0.5 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 20 TC=25°C TC=125°C 10 12 4 2 3.5 3 0.90 0.85 0.8 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Breakdown Voltage vs. Junction Temperature 0 10 20 30 40 50 60 70 80 90 100 GATE CHARGE (nC) FIGURE 4, Gate Charge VGE = 15V. 250µs PULSE TEST