TYPICAL PERFORMANCE CURVES
APT30GT60BRDQ2(G)
600V
APT30GT60BRDQ2
APT30GT60BRDQ2G*
®
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Thunderbolt IGBT®
TO
-2
The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
switching speed.
• Low Forward Voltage Drop
• High Freq. Switching to 100KHz
• Low Tail Current
• Ultra Low Leakage Current
G
C
47
E
C
• RBSOA and SCSOA Rated
G
E
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT30GT60BRDQ2(G)
VCES
Collector-Emitter Voltage
600
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
64
I C2
Continuous Collector Current @ TC = 110°C
30
I CM
SSOA
PD
TJ,TSTG
TL
Pulsed Collector Current
1
UNIT
Volts
Amps
110
Switching Safe Operating Area @ TJ = 150°C
110A @ 600V
Total Power Dissipation
Watts
250
Operating and Storage Junction Temperature Range
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA)
600
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
(VCE = VGE, I C = 700µA, Tj = 25°C)
3
TYP
4
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C)
1.6
2.0
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C)
2.8
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (VGE = ±20V)
MAX
5
Volts
2.5
50
1000
±100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Units
µA
nA
6-2008
MIN
Rev B
Characteristic / Test Conditions
052-6282
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT30GT60BRDQ2(G)
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
Qg
Total Gate Charge
MIN
TYP
Capacitance
1600
VGE = 0V, VCE = 25V
150
92
Test Conditions
Characteristic
f = 1 MHz
Gate Charge
3
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
SSOA
Switching Safe Operating Area
V
VGE = 15V
7.5
VCE = 300V
145
I C = 30A
10
TJ = 150°C, R G = 10Ω, VGE =
60
Current Rise Time
VCC = 400V
12
td(off)
Turn-off Delay Time
VGE = 15V
20
225
80
525
605
Inductive Switching (125°C)
VCC = 400V
600
I C = 30A
Current Fall Time
Turn-on Switching Energy (Diode)
Eoff
Turn-off Switching Energy
Turn-on Delay Time
tr
Current Rise Time
td(off)
tf
Eon1
RG = 10Ω
4
Eon2
td(on)
TJ = +25°C
5
6
VGE = 15V
Turn-off Delay Time
I C = 30A
Current Fall Time
Turn-on Switching Energy
A
110
Inductive Switching (25°C)
tr
Turn-on Switching Energy
nC
15V, L = 100µH,VCE = 600V
Turn-on Delay Time
Eon1
UNIT
pF
td(on)
tf
MAX
RG = 10Ω
44
Eon2
Turn-on Switching Energy (Diode)
Eoff
Turn-off Switching Energy
55
TJ = +125°C
6
ns
µJ
12
20
245
100
570
965
TYP
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case (IGBT)
.50
RθJC
Junction to Case (DIODE)
5.9
.67
WT
Package Weight
MAX
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
052-6282
Rev B
6-2008
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
V
GE
= 15V
15 &13V
TJ = -55°C
80
70
TJ = 25°C
60
50
TJ = 125°C
40
30
20
10
FIGURE 1, Output Characteristics(TJ = 25°C)
7V
20
60
50
40
30
TJ = 125°C
20
TJ = 25°C
0
0
5
10
15
20
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125°C)
14
J
VCE = 120V
12
VCE = 300V
10
8
VCE = 480V
6
4
2
0
2
4
6
8
10
12
VGE, GATE-TO-EMITTER VOLTAGE (V)
I = 30A
C
T = 25°C
0
IC = 60A
3.5
TJ = 25°C.
250µs PULSE TEST
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