APT30GT60BRG

TYPICAL PERFORMANCE CURVES APT30GT60BR(G) 600V APT30GT60BR APT30GT60BRG* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 100KHz • Low Tail Current • Ultra Low Leakage Current G C 47 E C • RBSOA and SCSOA Rated G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT30GT60BR(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 64 I C2 Continuous Collector Current @ TC = 110°C 30 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 110 Switching Safe Operating Area @ TJ = 150°C 110A @ 600V Total Power Dissipation Watts 250 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES (VCE = VGE, I C = 700µA, Tj = 25°C) 3 TYP 4 Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C) 1.6 2.0 Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C) 2.8 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) MAX 5 Volts 2.5 50 1000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Units µA nA 6-2008 MIN Rev E Characteristic / Test Conditions 052-6211 Symbol DYNAMIC CHARACTERISTICS Symbol APT30GT60BR(G) Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Total Gate Charge 3 Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) Turn-on Delay Time tr Current Rise Time td(off) Turn-off Delay Time tf Eon1 Capacitance 1600 VGE = 0V, VCE = 25V 150 f = 1 MHz 92 Gate Charge 7.5 VGE = 15V 145 VCE = 300V 10 I C = 30A 60 I C = 30A 4 Eoff Turn-off Switching Energy td(on) Turn-on Delay Time tr Current Rise Time RG = 10Ω TJ = +25°C 5 6 VGE = 15V Turn-off Delay Time I C = 30A Current Fall Time Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy V nC RG = 10Ω 44 55 TJ = +125°C 6 A 12 20 225 80 525 605 600 Inductive Switching (125°C) VCC = 400V UNIT pF 110 15V, L = 100µH,VCE = 600V Current Fall Time Turn-on Switching Energy MAX TJ = 150°C, R G = 10Ω, VGE = VGE = 15V Turn-on Switching Energy (Diode) tf TYP Inductive Switching (25°C) VCC = 400V Eon2 td(off) MIN Test Conditions Characteristic ns µJ 12 20 245 100 570 965 830 TYP ns µJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case (IGBT) .50 RθJC Junction to Case (DIODE) 5.9 N/A WT Package Weight MAX UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 052-6211 Rev E 6-2008 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES V GE = 15V 15 &13V TJ = -55°C 80 70 TJ = 25°C 60 50 TJ = 125°C 40 30 20 10 FIGURE 1, Output Characteristics(TJ = 25°C) 7V 20 60 50 40 30 TJ = 125°C 20 TJ = 25°C 0 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 125°C) 14 J VCE = 120V 12 VCE = 300V 10 8 VCE = 480V 6 4 2 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 30A C T = 25°C 0 IC = 60A 3.5 TJ = 25°C. 250µs PULSE TEST