APT30M36JFLL

APT30M36JFLL 300V POWER MOS 7 R 76A 0.036Ω Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 27 2 T- D G ® • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg S S FREDFET D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT30M36JFLL UNIT Drain-Source Voltage 300 Volts ID Continuous Drain Current @ TC = 25°C 76 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 463 Watts Linear Derating Factor 3.70 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 304 -55 to 150 °C 300 Amps 76 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 300 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 38A) TYP MAX UNIT Volts 0.036 Ohms Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 7-2004 Characteristic / Test Conditions 050-7158 Rev B Symbol APT30M36JFLL DYNAMIC CHARACTERISTICS Symbol Ciss Characteristic Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg 3 Total Gate Charge Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time RESISTIVE SWITCHING VGS = 15V VDD = 150V tf ID = 76A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 660 VDD = 200V, VGS = 15V 690 ID = 76A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C 6 nC 5 RG = 0.6Ω Eon UNIT pF 75 115 35 45 15 28 29 ID = 76A @ 25°C Turn-off Delay Time MAX 6480 1540 VDD = 150V Rise Time td(off) TYP VGS = 10V Qgs tr MIN µJ 770 VDD = 200V, VGS = 15V ID = 76A, RG = 5Ω 740 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS ISM VSD dv/ MIN TYP MAX 76 Continuous Source Current (Body Diode) Amps Pulsed Source Current 1 (Body Diode) 304 Diode Forward Voltage 2 (VGS = 0V, IS = -76A) 1.3 Volts 8 V/ns Peak Diode Recovery dt UNIT dv/ dt 5 t rr Reverse Recovery Time (IS = -76A, di/dt = 100A/µs) Tj = 25°C 240 Tj = 125°C 500 Q rr Reverse Recovery Charge (IS = -76A, di/dt = 100A/µs) Tj = 25°C 1.1 Tj = 125°C 5.2 IRRM Peak Recovery Current (IS = -76A, di/dt = 100A/µs) Tj = 25°C 12 Tj = 125°C 22 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.27 RθJC Junction to Case RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7158 Rev B 7-2004 0.30 0.9 t1 t2 Duty Factor D = t1/t2 SINGLE PULSE 0.05 0 10-5 10-4 °C/W 4 Starting Tj = +25°C, L = 0.87mH, RG = 25Ω, Peak IL = 76A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID76A di/dt ≤ 700A/µs VR ≤ 300V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.25 UNIT Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1 Typical Performance Curves 200 RC MODEL 0.0260 Power (watts) 10V 0.00119F 0.0585 0.0354F 0.185 0.463F ID, DRAIN CURRENT (AMPERES) Junction temp. (°C) APT30M36JFLL VGS=15V 9V 160 8V 120 7.5V 80 7V 40 6.5V Case temperature. (°C) 6V VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @