APT30M36LLLG

APT30M36B2LL APT30M36LLL 300V 84A 0.036Ω POWER MOS 7 R MOSFET ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg TO-264 D • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package MAXIMUM RATINGS Symbol T-MAX™ G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT30M36B2LL_LLL UNIT Drain-Source Voltage 300 Volts ID Continuous Drain Current @ TC = 25°C 84 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 568 Watts Linear Derating Factor 4.55 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 336 -55 to 150 °C 300 Amps 84 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 300 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 42A) TYP MAX Volts 0.036 Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 Ohms µA ±100 nA 5 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 7-2004 Characteristic / Test Conditions 050-7151 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT30M36B2LL_LLL Test Conditions Characteristic MIN TYP C iss Input Capacitance Coss Output Capacitance VDS = 25V 1540 C rss Reverse Transfer Capacitance f = 1 MHz 75 VGS = 10V 115 VDD = 150V 35 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr ID = 84A @ 25°C tf 31 VDD = 150V RG = 0.6Ω Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 4 INDUCTIVE SWITCHING @ 25°C 6 730 VDD = 200V, VGS = 15V 6 ns 29 ID = 84A @ 25°C Fall Time nC 15 VGS = 15V Turn-off Delay Time pF 45 RESISTIVE SWITCHING Rise Time td(off) UNIT 6480 VGS = 0V 3 MAX ID = 84A, RG = 5Ω 765 INDUCTIVE SWITCHING @ 125°C 855 VDD = 200V, VGS = 15V ID = 84A, RG = 5Ω µJ 845 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 84 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -84A, dl S/dt = 100A/µs) 530 ns Q rr Reverse Recovery Charge (IS = -84A, dl S/dt = 100A/µs) 11.5 µC dv/ Peak Diode Recovery dt dv/ 336 (Body Diode) 1.3 (VGS = 0V, IS = -84A) dt 5 Amps Volts 5 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.22 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 0.71mH, RG = 25Ω, Peak IL = 84A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID84A di/dt ≤ 700A/µs VR ≤ 300V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.9 0.7 0.15 0.5 Note: 0.10 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7151 Rev B 7-2004 0.25 0.20 0.3 t1 t2 0.05 0 Duty Factor D = t1/t2 0.1 0.05 10-5 SINGLE PULSE 10-4 °C/W Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1 Typical Performance Curves 200 RC MODEL 0.0145 Power (watts) VGS=15V 10V 0.0871 0.120 0.00193F 0.0167F 0.197F Case temperature. (°C) ID, DRAIN CURRENT (AMPERES) Junction temp. (°C) APT30M36B2LL_LLL 9V 160 8V 120 7.5V 80 7V 40 6.5V 6V VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @