APT30M61BLL
APT30M61SLL
300V 54A 0.061Ω
R
POWER MOS 7
MOSFET
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
D
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol
TO-247
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT30M61BLL-SLL
UNIT
300
Volts
Drain-Source Voltage
54
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
403
Watts
Linear Derating Factor
3.23
W/°C
PD
TJ,TSTG
216
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
54
(Repetitive and Non-Repetitive)
1
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 27A)
TYP
MAX
Volts
0.061
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
1-2004
Characteristic / Test Conditions
050-7156 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT30M61BLL - SLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
920
Reverse Transfer Capacitance
f = 1 MHz
41
VGS = 10V
64
VDD = 150V
23
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
ID = 54A @ 25°C
tf
20
VDD = 150V
ID = 54A @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
13
INDUCTIVE SWITCHING @ 25°C
6
367
VDD = 200V, VGS = 15V
ID = 54A, RG = 5Ω
319
INDUCTIVE SWITCHING @ 125°C
6
ns
36
RG = 0.6Ω
Fall Time
nC
12
VGS = 15V
Turn-off Delay Time
pF
26
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
3720
VGS = 0V
3
MAX
µJ
451
VDD = 200V, VGS = 15V
ID = 54A, RG = 5Ω
348
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
54
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -54A, dl S/dt = 100A/µs)
440
ns
Q
Reverse Recovery Charge (IS = -54A, dl S/dt = 100A/µs)
5.8
µC
rr
dv/
dt
Peak Diode Recovery
dv/
216
(Body Diode)
1.3
(VGS = 0V, IS = -54A)
dt
Amps
Volts
5
V/ns
MAX
UNIT
5
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.31
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.89mH, RG = 25Ω, Peak IL = 54A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -54A di/dt ≤ 700A/µs VR ≤ 300V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.25
0.7
0.20
0.5
0.15
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7156 Rev A
1-2004
0.35
0.30
0.3
0.10
t1
t2
0.05
0
SINGLE PULSE
0.1
10-5
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-4
°C/W
40
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT30M61BLL - SLL
180
15V
RC MODEL
Junction
temp. (°C)
0.119
0.0135F
Power
(watts)
0.191
0.319F
Case temperature. (°C)
ID, DRAIN CURRENT (AMPERES)
160
10V
140
9V
120
100
8V
80
60
40
7V
20
6V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
160
120
100
80
TJ = -55°C
60
TJ = +25°C
40
TJ = +125°C
20
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
GS
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
50
40
30
20
10
0
1.15
1.10
1.05
1.00
0.95
0.90
-50
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.2
D
V
= 27A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1-2004
ID, DRAIN CURRENT (AMPERES)
NORMALIZED TO
V
= 10V @ 27A
1.20
60
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
1.40
050-7156 Rev A
ID, DRAIN CURRENT (AMPERES)
140
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@
