APT30M70BVRG

APT30M70BVR APT30M70SVR 300V 0.070Ω Ω 48A POWER MOS V ® D3PAK TO-247 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested • Lower Leakage • TO-247 or Surface Mount D3PAK Package D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT30M70BVR_SVR UNIT 300 Volts Drain-Source Voltage 48 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 370 Watts Linear Derating Factor 2.96 W/°C VGSM PD TJ,TSTG 192 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 48 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 300 Volts 48 Amps On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) MAX 0.070 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Ohms µA ±100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) TYP 5-2003 BVDSS Characteristic / Test Conditions 050-5508 Rev D Symbol DYNAMIC CHARACTERISTICS Symbol APT30M70BVR_SVR Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 4890 5870 Coss Output Capacitance VDS = 25V 882 1235 Reverse Transfer Capacitance f = 1 MHz 277 415 Crss Qg Total Gate Charge Qgs 3 VGS = 10V 152 225 VDD = 0.5 VDSS 35 52 ID = ID[Cont.] @ 25°C 66 99 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr VGS = 15V 14 28 VDD = 0.5 VDSS 21 42 ID = ID[Cont.] @ 25°C 57 85 RG = 1.6Ω 10 20 TYP MAX Rise Time td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD Characteristic / Test Conditions MIN 48 Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) 192 Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 UNIT Amps Volts t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs) 440 ns Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/µs) 5.8 µC THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% TYP MAX 0.34 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 1.13mH, R = 25Ω, Peak I = 48A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.1 0.2 0.05 0.1 0.05 0.01 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5508 Rev D 5-2003 0.4 0.01 0.005 t2 SINGLE PULSE 0.001 10-5 t1 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION UNIT °C/W APT30M70BVR_SVR 100 100 VGS=15V 6V 80 5.5V 60 40 5V 20 4.5V ID, DRAIN CURRENT (AMPERES) VGS=10V 80 60 5.5V 40 5V 20 4.5V 4V 4V 0 0 TJ = +25°C 80 TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @