APT30N60BC6

APT30N60BC6 APT30N60SC6 600V COOLMOS 30A .125Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS(ON) -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D G S All Ratings per die: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VDSS ID Parameter APT30N60B_SC6 UNIT Drain-Source Voltage 600 Volts Continuous Drain Current @ TC = 25°C 30 Continuous Drain Current @ TC = 100°C 19 1 Amps 89 IDM Pulsed Drain Current VGS Total Power Dissipation @ TC = 25°C ±20 Volts PD Gate-Source Voltage Continuous 219 Watts TJ,TSTG TL dv/ dt Operating and Storage Junction Temperature Range - 55 to 150 °C Lead Temperature: 0.063" from Case for 10 Sec. 260 Drain-Source Voltage slope (VDS = 480V, ID = 30A, TJ = 125°C) 15 V/ns 5.2 Amps 2 IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 2 0.96 ( Id = 5.2A, Vdd = 50V ) mJ 636 ( Id = 5.2A, Vdd = 50V ) STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) MIN 3 TYP MAX 600 Volts 0.11 (VGS = 10V, ID = 14.5A) UNIT 0.125 Ohms Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) 100 Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) ±100 nA 3.5 Volts Gate Threshold Voltage (VDS = VGS, ID = 960μA) 2.5 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com μA 050-7209 Rev A 8-2010 Symbol DYNAMIC CHARACTERISTICS APT30N60B_SC6 Symbol Characteristic Test Conditions Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr 1990 Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 5 12 nC 46 9 17 ns 74 48 409 INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 30A, RG = 4.3Ω 5 pF 88 INDUCTIVE SWITCHING VGS = 15V VDD = 400V ID = 30A @ 25°C RG = 4.3Ω Eon UNIT 203 VGS = 10V VDD = 300V ID = 30A @ 25°C Fall Time MAX 2267 4 Turn-off Delay Time tf TYP VGS = 0V VDS = 25V f = 1 MHz Rise Time td(off) MIN 224 μJ 649 INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 30A, RG = 4.3Ω 282 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP IS Continuous Source Current (Body Diode) 26 ISM Pulsed Source Current 65 VSD Diode Forward Voltage 1 (Body Diode) 3 (VGS = 0V, IS = -30A) /dt Peak Diode Recovery dv/dt t rr Reverse Recovery Time (IS = -30A, di/dt = 100A/μs) Q rr Reverse Recovery Charge (IS = -30A, di/dt = 100A/μs) IRRM Peak Recovery Current (IS = -30A, di/dt = 100A/μs) dv MAX Amps 1.30 15 6 Tj = 25°C 661 Tj = 125°C 813 Tj = 25°C 15 Tj = 125°C 18 Tj = 25°C Tj = 125°C 46 UNIT Volts V/ns ns μC Amps 48 THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient MIN TYP MAX UNIT 0.52 °C/W 31 1 Repetitive Rating: Pulse width limited by maximum junction temperature 4 See MIL-STD-750 Method 3471 2 Repetitive avalanche causes additional power losses that can be calculated as 5 Eon includes diode reverse recovery. PAV = EAR*f . Pulse width tp limited by Tj max. 6 Maximum 125°C diode commutation speed = di/dt 600A/μs 3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.50 D = 0.9 0.40 0.7 0.30 0.5 Note: 0.20 0.3 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 050-7209 Rev A 8-2010 0.60 t1 t2 0.10 t SINGLE PULSE 0.05 0 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 10 -5 10 -4 10-3 10-2 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 APT30N60B_SC6 Typical Performance Curves 80 80 15V 10V 70 7.0V 6.5V 40 6.0V 30 5.5V 20 5.0V 10 60 ID, DRAIN CURRENT (A) IC, DRAIN CURRENT (A) 60 50 0 5 10 15 20 25 40 30 20 10 30 2 4 6 8 10 12 40 = 10V @ 15A 35 2.50 2.00 VGS = 10V 1.50 IDR, REVERSE 0 TJ= -55°C VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 3, Transfer Characteristics VGS = 20V ID, DRAIN CURRENT (A) GS TJ= 125°C 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Low Voltage Output Characteristics 3.00 NORMALIZED TO V TJ= 25°C 50 4.5V 0 VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @