TYPICAL PERFORMANCE CURVES
®
1200V APT33GF120B2_LRDQ2(G)
APT33GF120B2RDQ2 APT33GF120LRDQ2
APT33GF120B2RDQ2G* APT33GF120LRDQ2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
FAST IGBT & FRED
(B2)
T-Max®
TO-264
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through
technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• RBSOA and SCSOA Rated
• Ultra Low Leakage Current
(L)
C
• Ultrafast Soft Recovery Anti-parallel Diode
G
E
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT33GF120B2_LRDQ2(G)
VCES
Collector-Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
64
I C2
Continuous Collector Current @ TC = 100°C
30
I CM
SSOA
PD
TJ,TSTG
TL
Pulsed Collector Current
1
UNIT
Volts
Amps
75
Switching Safe Operating Area @ TJ = 150°C
75A @ 1200V
Total Power Dissipation
Watts
357
Operating and Storage Junction Temperature Range
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.5mA)
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
MAX
4.5
5.5
6.5
2.0
2.5
3.0
Units
1200
(VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
TYP
xx
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Volts
100
2
Gate-Emitter Leakage Current (VGE = ±20V)
6000
±120
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
nA
11-2005
V(BR)CES
MIN
Rev A
Characteristic / Test Conditions
052-6280
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT33GF120B2_LRDQ2(G)
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
3
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
SSOA
Switching Safe Operating Area
td(on)
tr
td(off)
tf
Eon1
tf
110
Gate Charge
10
VGE = 15V
170
TJ = 150°C, R G = 4.3Ω, VGE =
1315
TJ = +25°C
1515
14
VCC = 800V
17
Turn-off Delay Time
VGE = 15V
220
RG = 4.3Ω
135
1325
I C = 25A
Current Fall Time
Eoff
Turn-off Switching Energy
µJ
1930
Inductive Switching (125°C)
Current Rise Time
Turn-on Switching Energy (Diode)
ns
110
RG = 4.3Ω
Turn-on Delay Time
Turn-on Switching Energy
nC
185
6
Eon2
V
A
17
I C = 25A
Eon1
pF
75
14
5
UNIT
100
VCC = 800V
4
MAX
19
Inductive Switching (25°C)
Current Fall Time
Turn-off Switching Energy
td(off)
f = 1 MHz
15V, L = 100µH,VCE = 1200V
Turn-off Delay Time
Eoff
tr
230
VGE = 15V
Turn-on Switching Energy (Diode)
td(on)
1855
VGE = 0V, VCE = 25V
I C = 25A
Current Rise Time
Eon2
TYP
Capacitance
VCE = 600V
Turn-on Delay Time
Turn-on Switching Energy
MIN
44
55
TJ = +125°C
ns
µJ
3325
6
2145
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case (IGBT)
RθJC
Junction to Case (DIODE)
WT
Package Weight
MIN
TYP
MAX
.35
0.61
6.10
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
052-6280
Rev A
11-2005
4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
TJ = 25°C
60
TJ = -55°C
50
40
TJ = 125°C
30
20
10
70
12V
60
50
11V
40
10V
30
20
9V
0
5
10
15
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
250µs PULSE
TEST
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