APT35GP120BG

APT35GP120B APT35GP120BG *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 100 kHz operation @ 800V, 14A • Low Gate Charge • 50 kHz operation @ 800V, 25A • Ultrafast Tail Current shutoff • RBSOA rated MAXIMUM RATINGS Symbol G C E G E All Ratings: TC = 25°C unless otherwise specified. Parameter APT35GP120B(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±20 Gate-Emitter Voltage Transient ±30 VGEM I C1 Continuous Collector Current @ TC = 25°C 96 I C2 Continuous Collector Current @ TC = 110°C 46 I CM Pulsed Collector Current RBSOA PD TJ,TSTG TL C 1 UNIT Volts Amps 140 @ TC = 25°C Reverse Bias Safe Operating Area @ TJ = 150°C 140A @ 960V Watts 543 Total Power Dissipation -55 to 150 Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES 4.5 6 3.3 3.9 UNIT 1200 3 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) MAX 3 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Volts 250 2 Gate-Emitter Leakage Current (VGE = ±20V) ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com µA 2500 nA 12-2006 Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) TYP Rev E BVCES MIN 050-7406 Symbol APT35GP120B(G) DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions 3240 VGE = 0V, VCE = 25V 248 Reverse Transfer Capacitance f = 1 MHz 31 Gate-to-Emitter Plateau Voltage Gate Charge VGE = 15V 7.5 150 VCE = 600V 21 I C = 35A 62 Input Capacitance Coes Output Capacitance Cres VGEP Qge Qgc RBSOA TYP Capacitance Cies Qg MIN Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area TJ = 150°C, R G = 5Ω, VGE = MAX UNIT pF V nC 140 A 15V, L = 100µH,VCE = 960V td(on) tr td(off) tf Turn-on Delay Time Current Rise Time 4 Eoff Turn-off Switching Energy td(on) Turn-on Delay Time Eon2 Eoff 1305 16 VGE = 15V 147 20 I C = 35A Current Fall Time 5 ns 75 R G = 5Ω 4 Turn-on Switching Energy (Diode) µJ 680 Inductive Switching (125°C) VCC = 600V Turn-off Delay Time Turn-off Switching Energy 750 TJ = +25°C 6 Current Rise Time Turn-on Switching Energy ns 40 R G = 5Ω Turn-on Switching Energy (Diode) 5 Eon1 94 20 I C = 35A Eon2 tf VGE = 15V Current Fall Time Turn-on Switching Energy td(off) 16 Turn-off Delay Time Eon1 tr Inductive Switching (25°C) VCC = 600V 750 TJ = +125°C 2132 6 µJ 1744 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RΘJC Junction to Case (IGBT) .23 RΘJC Junction to Case (DIODE) N/A Package Weight 5.90 WT UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 050-7406 Rev E 12-2006 Microsemi reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES VGE = 15V. 250µs PULSE TEST