APT35GP120J

APT35GP120J 1200V E E ® POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 50 kHz operation @ 800V, 14A • Low Gate Charge • 20 kHz operation @ 800V, 25A • Ultrafast Tail Current shutoff • RBSOA rated 27 2 T- C SO "UL Recognized" ISOTOP ® C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±20 Gate-Emitter Voltage Transient ±30 VGEM I C1 Continuous Collector Current @ TC = 25°C 64 I C2 Continuous Collector Current @ TC = 110°C 29 I CM Pulsed Collector Current RBSOA PD TJ,TSTG TL UNIT APT35GP120J 1 Volts Amps 140 @ TC = 25°C 140A @ 960V Reverse Bias Safe Operating Area @ TJ = 150°C Watts 284 Total Power Dissipation -55 to 150 Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25°C) 3.3 3.9 Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 125°C) 3 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES 1200 3 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 250 2 Gate-Emitter Leakage Current (VGE = ±20V) µA 2500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Volts nA 6-2003 Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) UNIT Rev D BVCES MIN 050-7409 Symbol APT35GP120J DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions 3240 VGE = 0V, VCE = 25V 248 Reverse Transfer Capacitance f = 1 MHz 31 Gate-to-Emitter Plateau Voltage Gate Charge VGE = 15V 7.5 150 VCE = 600V 21 I C = 35A 62 Input Capacitance Coes Output Capacitance Cres VGEP Qge Qgc RBSOA TYP Capacitance Cies Qg MIN Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area TJ = 150°C, R G = 5Ω, VGE = MAX UNIT pF V nC 140 A 15V, L = 100µH,VCE = 960V td(on) tr td(off) tf Turn-on Delay Time Current Rise Time Eoff Turn-off Switching Energy td(on) Turn-on Delay Time Eon2 Eoff I C = 35A 40 4 Turn-on Switching Energy (Diode) 5 Eon1 94 20 R G = 5Ω Eon2 tf VGE = 15V Current Fall Time Turn-on Switching Energy td(off) 16 Turn-off Delay Time Eon1 tr Inductive Switching (25°C) VCC = 600V 750 TJ = +25°C 1305 6 16 VGE = 15V 147 Current Fall Time I C = 35A 75 Turn-on Switching Energy R G = 5Ω Current Rise Time Turn-off Delay Time Turn-off Switching Energy µJ 680 Inductive Switching (125°C) VCC = 600V 4 Turn-on Switching Energy (Diode) ns 5 20 ns 750 TJ = +125°C 2132 6 µJ 1744 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RΘJC Junction to Case (IGBT) .44 RΘJC Junction to Case (DIODE) N/A Package Weight 29.2 WT UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 050-7409 Rev D 6-2003 APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 80 80 70 IC, COLLECTOR CURRENT (A) 60 50 40 TC=25°C 30 TC=125°C 20 10 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) TC=25°C 30 TC=125°C 20 10 60 TJ = 25°C 40 TJ = 125°C 20 TJ = -55°C 0 2 3 4 5 6 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 6 TJ = 25°C. 250µs PULSE TEST