APT35GP120JDQ2

APT35GP120JDQ2 1200V TYPICAL PERFORMANCE CURVES APT35GP120JDQ2 ® ® C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss E E POWER MOS 7 IGBT ISOTOP ® • RBSOA Rated • Low Gate Charge S OT 22 7 "UL Recognized" file # E145592 C • Ultrafast Tail Current shutoff G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT35GP120JDQ2 VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 64 I C2 Continuous Collector Current @ TC = 110°C 26 I CM RBSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 140 Reverse Bias Safe Operating Area @ TJ = 150°C 140A @ 960V Total Power Dissipation Watts 284 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES MAX 4.5 6 3.3 3.9 Units 1200 (VCE = VGE, I C = 1mA, Tj = 25°C) 3 Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) TYP 3 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Volts 350 2 Gate-Emitter Leakage Current (VGE = ±20V) 3000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA nA 11-2005 V(BR)CES MIN Rev A Characteristic / Test Conditions 050-7631 Symbol DYNAMIC CHARACTERISTICS Symbol APT35GP120JDQ2 Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge RBSOA td(on) tr td(off) tf Eon1 31 Gate Charge 7.5 VGE = 15V 150 750 680 Inductive Switching (125°C) 16 VCC = 600V 20 VGE = 15V 145 RG = 4.3Ω 75 750 I C = 35A Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy 44 55 µJ 1305 6 Current Fall Time ns 40 TJ = +25°C Turn-off Delay Time nC 95 I C = 35A Current Rise Time V A 20 RG = 4.3Ω Turn-on Delay Time pF 140 16 5 UNIT 60 VCC = 600V 4 MAX 21 Inductive Switching (25°C) Current Fall Time Turn-off Switching Energy tf f = 1 MHz 15V, L = 100µH,VCE = 960V Turn-off Delay Time Eoff td(off) 250 VGE = 15V Turn-on Switching Energy (Diode) tr VGE = 0V, VCE = 25V TJ = 150°C, R G = 4.3Ω, VGE = Current Rise Time Eon2 td(on) 3240 I C = 35A Turn-on Delay Time TYP Capacitance VCE = 600V Reverse Bias Safe Operating Area Turn-on Switching Energy MIN TJ = +125°C ns µJ 2130 6 1745 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case (IGBT) RθJC Junction to Case (DIODE) WT VIsolation MIN Package Weight TYP MAX .44 1.10 29.2 RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 UNIT °C/W gm Volts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7631 Rev A 11-2005 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained h 80 80 70 70 IC, COLLECTOR CURRENT (A) TJ = 25°C 40 30 TJ = 125°C 20 10 0 TJ = -55°C 60 TJ = 25°C 40 TJ = 125°C 20 2 3 4 5 6 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics TJ = 25°C. 250µs PULSE TEST