APT36GA60B

APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 D 3 PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT36GA60B poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Single die IGBT ® FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI • ZVS phase shifted and other full bridge • Very Low Eoff for maximum efficiency • Half bridge • Ultra low Cres for improved noise immunity • High power PFC boost • Low conduction loss • Welding • Low gate charge • UPS, solar, and other inverters • Increased intrinsic gate resistance for low EMI • High frequency, high efficiency industrial • RoHS compliant Absolute Maximum Ratings Ratings Unit Collector Emitter Voltage 600 V IC1 Continuous Collector Current @ TC = 25°C 65 IC2 Continuous Collector Current @ TC = 100°C 36 ICM Pulsed Collector Current 109 VGE Gate-Emitter Voltage PD Total Power Dissipation @ TC = 25°C Vces Parameter 1 2 SSOA Switching Safe Operating Area @ TJ = 150°C TJ, TSTG Operating and Storage Junction Temperature Range TL Symbol VBR(CES) VGE(th) Gate Emitter Threshold Voltage °C 300 TJ = 25°C unless otherwise specified Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage V W -55 to 150 Parameter VCE(on) ±30 290 109A @ 600V Lead Temperature for Soldering: 0.063" from Case for 10 Seconds Static Characteristics A Test Conditions Min VGE = 0V, IC = 1.0mA 600 Zero Gate Voltage Collector Current IGES Gate-Emitter Leakage Current Max 2.5 VGE = 15V, TJ = 25°C 2.0 IC = 20A TJ = 125°C 1.9 VGE =VCE , IC = 1mA ICES Typ 3 4.5 V 6 VCE = 600V, TJ = 25°C 250 VGE = 0V TJ = 125°C 2500 VGS = ±30V Unit μA ±100 nA Thermal and Mechanical Characteristics Symbol RθJC WT Torque Characteristic Min Typ Max Unit Junction to Case Thermal Resistance - - 0.43 °C/W Package Weight - 5.9 Mounting Torque (TO-247 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com - g 10 in·lbf 052-6327 Rev C 5 - 2011 Symbol Dynamic Characteristics Symbol Parameter Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Total Gate Charge Qge Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time APT36GA60B TJ = 25°C unless otherwise specified Test Conditions Min Typ Capacitance 2880 VGE = 0V, VCE = 25V 226 f = 1MHz 328 Gate Charge 102 VGE = 15V 18 IC = 20A L= 100uH, VCE = 600V Inductive Switching (25°C) 109 A 16 VCC = 400V 14 Turn-Off Delay Time VGE = 15V 122 IC = 20A 77 Eon2 Turn-On Switching Energy RG = 10Ω4 307 Eoff6 Turn-Off Switching Energy TJ = +25°C 254 td(on Turn-On Delay Time Inductive Switching (125°C) 14 tr td(off) Current Rise Time VCC = 400V 15 Turn-Off Delay Time VGE = 15V 149 IC = 20A 113 Eon2 Turn-On Switching Energy RG = 10Ω4 508 Eoff6 Turn-Off Switching Energy TJ = +125°C 439 tf Current Fall Time pF 34 Current Rise Time Current Fall Time Unit nC VCE= 300V TJ = 150°C, RG = 10Ω4, VGE = 15V, Max ns μJ ns μJ 052-6327 Rev C 5 - 2011 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 50 TJ= 125°C TJ= 150°C 30 20 10 12V 160 11V 120 200 150 100 TJ= 25°C 50 TJ= -55°C TJ= 125°C 0 2 4 10V 80 9V 40 0 8V 6V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25°C) 16 250μs PULSE TEST