APT36GA60BD15

900V 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET TO -24 7 D3 • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Dual die (parallel) G • Popular T-MAX Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. All Ratings per die: TC = 25°C unless otherwise specified. MAXIMUM RATINGS APT36N90BC3G UNIT Drain-Source Voltage 900 Volts Continuous Drain Current @ TC = 25°C 36 Continuous Drain Current @ TC = 100°C 23 Symbol Parameter VDSS ID Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±20 Volts Total Power Dissipation @ TC = 25°C 390 Watts PD 1 96 TJ,TSTG Operating and Storage Junction Temperature Range TL dv/ dt Drain-Source Voltage slope (VDS = 400V, ID = 36A, TJ = 125°C) 50 V/ns 8.8 Amps 2 Avalanche Current EAR Repetitive Avalanche Energy 2 Single Pulse Avalanche Energy °C 260 Lead Temperature: 0.063" from Case for 10 Sec. IAR EAS -55 to 150 2.9 ( Id = 8.8A, Vdd = 50V ) ( Id = 8.8A, Vdd = 50V ) mJ 1940 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) RDS(on) IDSS IGSS VGS(th) Drain-Source On-State Resistance MIN 3 TYP MAX Volts 900 (VGS = 10V, ID = 18A) UNIT 0.10 0.12 Ohms Zero Gate Voltage Drain Current (VDS = 900V, VGS = 0V) - - 100 Zero Gate Voltage Drain Current (VDS = 900V, VGS = 0V, TC = 150°C) - 50 - Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) - - 100 nA 2.5 3 3.5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.9mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com μA 050-8068 Rev C 3-2012 Symbol APT36N90BC3G Symbol Characteristic Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Reverse Transfer Capacitance f = 1 MHz Crss Qg Qgs 4 VGS = 10V Gate-Source Charge VDD = 450V Total Gate Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr td(off) tf MIN Test Conditions Ciss TYP 7463 6827 INDUCTIVE SWITCHING VGS = 15V VDD = 600V Turn-off Delay Time ID = 36A @ 25°C Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy nC ns RG = 4.3Ω 25 5 INDUCTIVE SWITCHING @ 25°C VDD = 600V, VGS = 15V 1500 ID = 36A, RG = 4.3Ω 750 5 INDUCTIVE SWITCHING @ 125°C VDD = 600V, VGS = 15V 2130 Fall Time UNIT pF 167 252 38 112 70 20 400 ID = 36A @ 25°C Rise Time MAX μJ 867 ID = 36A, RG = 4.3Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Pulsed Source Current 1 VSD Diode Forward Voltage 3 /dt t rr Q rr IRRM TYP Continuous Source Current (Body Diode) ISM dv MIN Characteristic / Test Conditions Peak Diode Recovery dv 36 (Body Diode) /dt MAX UNIT Amps 96 (VGS = 0V, IS = 18A) 0.8 6 Reverse Recovery Time (IS = -36A, di/dt = 100A/μs) Reverse Recovery Charge (IS = -36A, di/dt = 100A/μs) Peak Recovery Current (IS = -36A, di/dt = 100A/μs) 1.2 Volts 10 V/ns Tj = 25°C 930 Tj = 125°C 1230 Tj = 25°C 35 μC Tj = 125°C Tj = 25°C 44 70 Tj = 125°C Amps 68 ns THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case 0.3 RθJA Junction to Ambient 31 1 Repetitive Rating: Pulse width limited by maximum junction 4 See MIL-STD-750 Method 3471 temperature 5 Eon includes diode reverse recovery. 2 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f . Pulse width tp limited by Tj max. 6 Maximum 125°C diode commutation speed = di/dt 600A/μs 3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.30 D = 0.9 0.25 0.7 0.20 0.5 Note: 0.10 0.3 P DM ZθJC, THERMAL IMPEDANCE (°C/W) 050-8068 Rev C 3-2012 0.35 0.05 0.1 0.15 t1 t2 t SINGLE PULSE 0.05 0 10 -5 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 10-2 0.1 10-3 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 -4 10 UNIT °C/W APT36N90BC3G Typical Performance Curves 120 100 10 &15V 80 ID, DRAIN CURRENT (A) IC, DRAIN CURRENT (A) 100 5.5V 80 60 5V 40 4.5V 20 70 60 50 40 30 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Low Voltage Output Characteristics GS 0 1 2 3 4 5 6 40 = 10V @ 47A 35 ID, DRAIN CURRENT (A) 1.3 1.2 IDR, REVERSE TJ= 125°C VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 3, Transfer Characteristics NORMALIZED TO V TJ= 25°C 10 0 1.4 TJ= -55°C 20 4V 0 VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @