APT38N60BC6

APT38N60BC6 APT38N60SC6 600V COOLMOS 38A 0.099Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS(ON) -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package. G S All Ratings per die: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VDSS ID Parameter APT38N60B_SC6 UNIT Drain-Source Voltage 600 Volts Continuous Drain Current @ TC = 25°C 38 Continuous Drain Current @ TC = 100°C 24 1 Amps 112 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±20 Volts PD Total Power Dissipation @ TC = 25°C 278 Watts TJ,TSTG TL dv/ dt Operating and Storage Junction Temperature Range -55 to 150 °C Lead Temperature: 0.063" from Case for 10 Sec. 260 Drain-Source Voltage slope (VDS = 480V, ID = 38A, TJ = 125°C) 15 V/ns 6.6 Amps 2 IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 2 1.2 ( Id = 6.6A, Vdd = 50V ) mJ 796 ( Id = 6.6A, Vdd = 50V ) STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) MIN 3 TYP MAX 600 Volts 0.099 (VGS = 10V, ID = 18A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) 100 Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.2mA) 2.5 UNIT 3 Ohms μA ±100 nA 3.5 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com 050-7207 Rev C 1-2011 Symbol DYNAMIC CHARACTERISTICS APT38N60B_SC6 Symbol Characteristic Test Conditions Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr 2428 Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 5 18 nC 58 14 29 ns 118 69 710 INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 38A, RG = 4.3Ω 5 pF 112 INDUCTIVE SWITCHING VGS = 15V VDD = 400V ID = 38A @ 25°C RG = 4.3Ω Eon UNIT 261 VGS = 10V VDD = 300V ID = 38A @ 25°C Fall Time MAX 2826 4 Turn-off Delay Time tf TYP VGS = 0V VDS = 25V f = 1 MHz Rise Time td(off) MIN 550 μJ 1100 INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 38A, RG = 4.3Ω 625 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX IS Continuous Source Current (Body Diode) 33 ISM Pulsed Source Current 112 VSD Diode Forward Voltage 1 (Body Diode) 3 (VGS = 0V, IS = -38A) UNIT Amps 1.3 Volts 8 V/ns /dt Peak Diode Recovery /dt t rr Reverse Recovery Time (IS = -38A, di/dt = 100A/μs) Tj = 25°C 667 ns Q rr Reverse Recovery Charge (IS = -38A, di/dt = 100A/μs) Tj = 25°C 18 μC IRRM Peak Recovery Current (IS = -38A, di/dt = 100A/μs) Tj = 25°C 49 Amps dv dv 6 THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient MIN TYP MAX UNIT 0.45 °C/W 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 4 See MIL-STD-750 Method 3471 2 Repetitive avalanche causes additional power losses that can be calculated as 5 Eon includes diode reverse recovery. PAV = EAR*f . Pulse width tp limited by Tj max. 6 Maximum 125°C diode commutation speed = di/dt 600A/μs 3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the specifications and information contained herein. D = 0.9 0.4 0.7 0.3 0.5 Note: 0.2 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 050-7207 Rev C 1-2011 0.5 0.3 t1 t2 0.1 t 0.1 SINGLE PULSE 0.05 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0 10-5 10-4 10-2 10-3 0.1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1 APT38N60B_SC6 Typical Performance Curves 100 60 10 &15V 50 7V 60 6.5V 6V 40 5.5V 20 5V ID, DRAIN CURRENT (A) 80 40 30 20 TJ= 25°C 10 4.5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Low Voltage Output Characteristics 3.00 0 2.50 GS = 10V @ 19A 35 2.00 VGS = 10V 1.50 VGS = 20V 1.00 0.50 0 0 25 20 15 10 40 60 80 100 120 ID, DRAIN CURRENT (A) FIGURE 4, RDS(ON) vs Drain Current 0 20 .15 1.10 1.05 .00 .95 0.90 0.85 50 75 100 125 150 2.5 2.0 1.5 1.0 0.5 0 -50 0 50 100 150 TJ, Junction Temperature (°C) FIGURE 6, Breakdown Voltage vs Temperature 1.2 25 TC, CASE TEMPERATURE (C°) FIGURE 5, Maximum Drain Current vs Case Temperature 3.0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 30 5 .20 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (C°) FIGURE 7, On-Resistance vs Temperature 800 1.1 100 ID, DRAIN CURRENT (A) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1 2 3 4 5 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 3, Transfer Characteristics 40 NORMALIZED TO V ID, DRAIN CURRENT (A) RDS(on), DRAIN-TO-SOURCE ON RESISTANCE 0 TJ= -55°C TJ= 125°C 1.0 0.9 0.8 0.7 10 Rds(on) 100µs 1ms 10µs 1 10ms 100ms 0.1 - 50 0 50 100 150 TC, Case Temperature (°C) FIGURE 8, Threshold Voltage vs Temperature 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 9, Maximum Safe Operating Area 050-7207 Rev C 1-2011 IC, DRAIN CURRENT (A) VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @