APT40GF120JRDQ2

APT40GF120JRDQ2 1200V TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an Microsemi free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 20KHz • RBSOA and SCSOA Rated • Ultra Low Leakage Current C G ISOTOP ® 22 OT 7 S "UL Recognized" file # E145592 C • Ultrafast Soft Recovery Anti-parallel Diode • Intergrated Gate Resistor: Low EMI, High Reliability G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT40GF120JRDQ2 VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 80 I C2 Continuous Collector Current @ TC = 100°C 42 I CM SSOA PD TJ,TSTG Pulsed Collector Current 1 UNIT Volts Amps 150 Switching Safe Operating Area @ TJ = 150°C 150A @ 1200V Total Power Dissipation Operating and Storage Junction Temperature Range 347 Watts -55 to 150 °C STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES RG(int) MAX 5.5 6.5 2.5 3.0 Units 1200 (VCE = VGE, I C = 700µA, Tj = 25°C) 4.5 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) TYP 3.1 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Volts 200 2 Gate-Emitter Leakage Current (VGE = ±20V) ±100 5 Intergrated Gate Resistor CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com µA 1500 nA Ω 5-2006 V(BR)CES MIN Rev B Characteristic / Test Conditions 052-6285 Symbol DYNAMIC CHARACTERISTICS Symbol APT40GF120JRDQ2 Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge MIN TYP Capacitance 3460 VGE = 0V, VCE = 25V 385 f = 1 MHz 225 Gate Charge 9.5 VGE = 15V 340 VCE = 600V MAX UNIT pF V nC 30 I C = 50A 205 7 SSOA td(on) tr td(off) tf Eon1 TJ = 150°C, R G = 1.0Ω, VGE = Switching Safe Operating Area 15V, L = 100µH,VCE = 1200V Turn-on Delay Time Turn-off Switching Energy td(off) tf 70 RG = 1.0Ω 7 4 3600 TJ = +25°C 5 ns 260 I C = 50A Current Fall Time Eoff tr 43 Turn-off Delay Time Turn-on Switching Energy (WithDiode) td(on) 25 VCC = 800V VGE = 15V Eon2 A Inductive Switching (25°C) Current Rise Time Turn-on Switching Energy 150 µJ 4675 6 2640 Turn-on Delay Time Inductive Switching (125°C) 25 VCC = 800V 43 Current Rise Time Turn-off Delay Time VGE = 15V 300 RG = 1.0Ω 7 95 3750 I C = 50A Current Fall Time Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy (WithDiode) Eoff Turn-off Switching Energy 44 55 TJ = +125°C ns µJ 6400 6 3400 THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC Junction to Case (IGBT) RθJC Junction to Case (DIODE) VIsolation WT Torque 1 Characteristic RMS Voltage (50-60Hz Sinusoidal MIN TYP MAX 0.36 1.1 Waveform from Terminals to Mounting Base for 1 Min.) Package Weight Maximum Terminal & Mounting Torque 2500 UNIT °C/W Volts 1.03 oz 29.2 gm 10 Ib•in 1.1 N•m Repetitive Rating: Pulse width limited by maximum junction temperature. 052-6285 Rev B 5-2006 2 For Combi devices, Ices includes both IGBT and diode leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) Mircosemi Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES = 15V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 TJ = 25°C 100 TJ = -55°C 80 TJ = 125°C 60 40 20 12V 120 11V 100 80 10V 60 9V 40 8V 0 0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) 160 120 100 80 60 TJ = -55°C 40 TJ = 25°C 20 TJ = 125°C 0 FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST