APT40GP60BG

APT40GP60B APT40GP60S 600V ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 100 kHz operation @ 400V, 41A • Low Gate Charge • 200 kHz operation @ 400V, 26A • Ultrafast Tail Current shutoff • SSOA rated TO-247 D3PAK C G C G E E C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT40GP60B_S VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±20 Gate-Emitter Voltage Transient ±30 VGEM 7 I C1 Continuous Collector Current I C2 Continuous Collector Current @ TC = 110°C I CM Pulsed Collector Current SSOA PD TJ,TSTG TL 1 UNIT Volts 100 @ TC = 25°C 62 Amps 160 @ TC = 150°C 160A @ 600V Switching Safe Operating Area @ TJ = 150°C 543 Total Power Dissipation Watts -55 to 150 Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25°C) 2.2 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125°C) 2.1 3 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 250 2 Gate-Emitter Leakage Current (VGE = ±20V) UNIT Volts µA 2500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. nA 2-2004 MIN Rev D Characteristic / Test Conditions APT Website - http://www.advancedpower.com 050-7403 Symbol APT40GP60B_S DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Qgc SSOA Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching SOA MIN TYP Capacitance 4610 VGE = 0V, VCE = 25V 395 f = 1 MHz 25 Gate Charge VGE = 15V 7.5 135 VCE = 300V 30 I C = 40A 40 TJ = 150°C, R G = 5Ω, VGE = MAX UNIT pF V nC 160 A 15V, L = 100µH,VCE = 600V td(on) tr td(off) tf Turn-on Delay Time Current Rise Time Eoff Turn-off Switching Energy td(on) Turn-on Delay Time Eon2 Eoff I C = 40A 45 4 Turn-on Switching Energy (Diode) 5 Eon1 64 352 20 VGE = 15V 89 I C = 40A 69 Current Fall Time 5 µJ 450 29 R G = 5Ω 4 Turn-on Switching Energy (Diode) Turn-off Switching Energy 644 Inductive Switching (125°C) VCC(Peak) = 400V Turn-off Delay Time ns 385 TJ = +25°C 6 Current Rise Time Turn-on Switching Energy 29 R G = 5Ω Eon2 tf VGE = 15V Current Fall Time Turn-on Switching Energy td(off) 20 Turn-off Delay Time Eon1 tr Inductive Switching (25°C) VCC(Peak) = 400V ns 385 TJ = +125°C 972 6 µJ 615 950 TYP MAX THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN RΘJC Junction to Case (IGBT) .23 RΘJC Junction to Case (DIODE) N/A Package Weight 5.90 WT UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature. 050-7403 Rev D 2-2004 APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT40GP60B_S 80 80 VGE = 15V. 250µs PULSE TEST