APT40GP90BG

APT40GP90B TYPICAL PERFORMANCE CURVES APT40GP90B 900V POWER MOS 7 IGBT ® TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss G • SSOA Rated C E C • Low Gate Charge G • Ultrafast Tail Current shutoff E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter VCES Collector-Emitter Voltage 900 VGE Gate-Emitter Voltage ±20 VGEM Gate-Emitter Voltage Transient ±30 IC1 Continuous Collector Current IC2 Continuous Collector Current @ TC = 110°C ICM Pulsed Collector Current SSOA PD TJ,TSTG TL UNIT APT40GP90B 1 7 Volts 100 @ TC = 25°C 50 Amps 160 @ TC = 150°C 160A @ 900V Switching Safe Operating Area @ TJ = 150°C 543 Total Power Dissipation Watts -55 to 150 Operating and Storage Junction Temperature Range °C 300 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS MIN BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) 900 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25°C) 3.2 3.9 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125°C) 2.7 3 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 250 2 Gate-Emitter Leakage Current (VGE = ±20V) Volts µA 1000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT nA 5-2004 Characteristic / Test Conditions 050-7479 Rev A Symbol APT40GP90B DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions 3300 VGE = 0V, VCE = 25V 325 Reverse Transfer Capacitance f = 1 MHz 35 Gate-to-Emitter Plateau Voltage Gate Charge VGE = 15V 7.5 145 VCE = 450V 22 55 Input Capacitance Coes Output Capacitance Cres VGEP Qge TYP Capacitance Cies Qg MIN Total Gate Charge 3 Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge I C = 40A SSOA Switching Safe Operating Area TJ = 150°C, R G = 5Ω, VGE = MAX UNIT pF V nC 160 A 15V, L = 100µH,VCE = 900V td(on) tr td(off) tf Turn-on Delay Time Current Rise Time Eoff Turn-off Switching Energy td(on) Turn-on Delay Time Eon2 Eoff 16 VGE = 15V 110 27 I C = 40A Current Fall Time 55 ns 105 R G = 5Ω 44 Turn-on Switching Energy (Diode) µJ 825 Inductive Switching (125°C) VCC = 600V Turn-off Delay Time Turn-off Switching Energy 1415 6 Current Rise Time Turn-on Switching Energy TBD TJ = +25°C 5 ns 60 R G = 5Ω 4 Turn-on Switching Energy (Diode) Eon1 75 27 I C = 40A Eon2 tf VGE = 15V Current Fall Time Turn-on Switching Energy td(off) 16 Turn-off Delay Time Eon1 tr Inductive Switching (25°C) VCC = 600V TBD TJ = +125°C 2370 66 µJ 1505 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RΘJC Junction to Case (IGBT) .23 RΘJC Junction to Case (DIODE) N/A Package Weight 5.90 WT UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature. 050-7479 Rev A 5-2004 APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 160 140 IC, COLLECTOR CURRENT (A) 140 120 100 TC = 125°C 80 TC = 25°C 60 TC = -50°C 40 20 100 80 TJ = -55°C 60 TJ = 25°C TJ = 125°C 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 0 TC = -50°C 40 5 IC = 80A TJ = 25°C. 250µs PULSE TEST