APT40GT60BRG

APT40GT60BR 600V, 80A, VCE(ON) = 2.1V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. TO -24 7 Features • Low Forward Voltage Drop • RBSOA and SCSOA Rated • Low Tail Current • High Frequency Switching to 150KHz • RoHS Compliant • Ultra Low Leakage Current G C E C G E All Ratings: TC = 25°C unless otherwise specified. Maximum Ratings Symbol Parameter Ratings VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±20 IC1 Continuous Collector Current @ TC = 25°C 80 IC2 Continuous Collector Current @ TC = 105°C 40 ICM Pulsed Collector Current 1 160 SSOA PD TJ, TSTG Unit Volts Switching Safe Operating Area @ TJ = 150°C Amps 160A @ 600V Total Power Dissipation Operating and Storage Junction Temperature Range 345 Watts -55 to 150 °C Static Electrical Characteristics Min Typ Max V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 5mA) 600 - - VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 500μA, Tj = 25°C) 3 4 5 Collector Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C) 1.6 2.15 2.5 Collector Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C) - - 2.8 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 - - 80 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 - - 2000 Gate-Emitter Leakage Current (VGE = ±20V) - - 100 VCE(ON) ICES IGES Volts μA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Unit nA 052-6222 Rev D 3 - 2012 Symbol Characteristic / Test Conditions Dynamic Characteristic Symbol APT40GT60BR Characteristic Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Total Gate Charge Qge Gate-Emitter Charge Qgc SSOA td(on) tr td(off) tf Min Typ Max - 2190 - - 220 - - 130 - - 8.0 - VGE = 15V - 200 - VCE= 300V - 12 - IC = 40A - 86 - TJ = 150°C, RG = 5Ω , VGE = 15V, L 160 VGE = 0V, VCE = 25V 3 f = 1MHz Gate Charge Gate-Collector Charge Switching Safe Operating Area = 100μH, VCE= 600V Current Rise Time Turn-Off Delay Time 12 - Inductive Switching (25°C) - 36 - VCC = 400V - 124 - - 55 - RG = 5Ω - - - TJ = +25°C - 945 - VGE = 15V Current Fall Time IC = 40A Eon1 Turn-On Switching Energy 4 Eon2 Turn-On Switching Energy 5 Eoff Turn-Off Switching Energy 6 - 828 - td(on) Turn-On Delay Time - 12 - Inductive Switching (125°C) - 33 - Turn-Off Delay Time VCC = 400V - 165 - Current Fall Time VGE = 15V - 58 - Turn-On Switching Energy 4 IC = 40A - - Eon2 Turn-On Switching Energy RG = 5Ω - 5 - 1342 - Eoff Turn-Off Switching Energy 6 - 1150 - tr td(off) tf Eon1 Current Rise Time TJ = +125°C pF V nC A - Turn-On Delay Time Unit ns μJ ns μJ Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions Min Typ Max Unit RθJC Junction to Case (IGBT) - - 0.36 RθJC Junction to Case (DIODE) - - N/A WT Package Weight - 6.1 - g - - 10 in·lbf - - 1.1 N·m 2500 - - Volts °C/W Torque Terminals and Mounting Screws VIsolation RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 052-6222 Rev D 3 - 2012 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves GE 15V = 15V TJ= 125°C TJ= 25°C TJ= 55°C VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) TJ= 25°C TJ= 125°C TJ= -55°C IC = 40A IC = 200A VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC = 80A 10V 9V 8V 7V 6V I = 40A C T = 25°C J VCE = 120V VCE = 300V VCE = 480V GATE CHARGE (nC) FIGURE 4, Gate charge VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics TJ = 25°C. 250μs PULSE TEST