APT40N60JCU3

APT40N60JCU3 ISOTOP® Buck chopper Super Junction MOSFET Power Module D VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 40A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies Features • G S A A S D G • • • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant ISOTOP ID IDM VGS RDSon PD IAR EAR EAS IFA V IFRMS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25°C Tc = 80°C Max ratings 600 40 30 120 ±20 70 290 20 1 1800 30 39 Unit V A V mΩ W A June, 2006 Symbol VDSS mJ A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1-8 APT40N60JCU3 – Rev 1 Absolute maximum ratings APT40N60JCU3 All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 20A VGS = VDS, ID = 1mA VGS = ±20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 40A Resistive Switching VGS = 15V VBus = 380V ID = 40A R G = 1.8Ω 2.1 3 Min Typ 7015 2565 212 259 29 Max 25 250 70 3.9 ±100 Unit Max Unit µA mΩ V nA pF nC 111 20 30 115 ns 10 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 40A, R G = 5Ω 670 Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 40A, R G = 5Ω 1100 980 1206 µJ µJ June, 2006 Symbol www.microsemi.com 2-8 APT40N60JCU3 – Rev 1 Electrical Characteristics APT40N60JCU3 Chopper diode ratings and characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 23 IF = 30A VR = 400V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 85 160 4 8 130 700 70 1300 30 Reverse Recovery Time IRRM Maximum Reverse Recovery Current Qrr Reverse Recovery Charge trr Qrr Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IRRM IF = 30A VR = 400V di/dt =1000A/µs Min 250 500 Tj = 125°C Characteristic Min Typ CoolMos Diode RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Max 1.8 44 Thermal and package characteristics Symbol Typ 1.6 1.9 1.4 RMS Isolation Voltage, any terminal to case t =1 min, I isol