APT44F80B2

APT44F80B2 APT44F80L 800V, 44A, 0.24Ω Max, trr ≤370ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. T-Max® TO-264 APT44F80B2 APT44F80L D Single die FREDFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol Parameter Ratings Unit Continuous Drain Current @ TC = 25°C 44 Continuous Drain Current @ TC = 100°C 27 IDM Pulsed Drain Current 1 173 VGS Gate - Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1980 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 24 A ID A Thermal and Mechanical Characteristics Min Typ Max Unit W PD Total Power Dissipation @ TC = 25°C - - 1135 RθJC Junction to Case Thermal Resistance - - .11 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface - .11 - -55 - 150 - - 300 - 0.22 - oz - 6.2 - g - - 10 in·lbf - - 1.1 N·m Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque (TO-264 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com Downloaded from Elcodis.com electronic components distributor °C 9-2007 TJ, TSTG °C/W Rev A Characteristic 050-8161 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter VBR(DSS) Drain-Source Breakdown Voltage ∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ 3 IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Symbol Min VGS = 0V, ID = 250μA 800 Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Co(cr) Co(er) 5 VGS = 10V, ID = 24A 0.20 0.24 Ω 4 5 V 3 Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf V/°C -10 mV/°C VDS = 800V TJ = 25°C 250 VGS = 0V TJ = 125°C 1000 μA ±100 nA Max Unit TJ = 25°C unless otherwise specified Test Conditions Min VDS = 50V, ID = 24A Current Rise Time Turn-Off Delay Time Current Fall Time Typ S 43 9330 VGS = 0V, VDS = 25V f = 1MHz 160 930 Effective Output Capacitance, Energy Related Total Gate Charge Unit V VGS = ±30V Effective Output Capacitance, Charge Related Qg Max 0.87 Output Capacitance 4 Typ Reference to 25°C, ID = 250μA Parameter gfs Coss Test Conditions VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient APT44F80B2_L pF 440 VGS = 0V, VDS = 0V to 533V 220 305 VGS = 0 to 10V, ID = 24A, VDS = 400V 51 nC 155 55 Resistive Switching 75 VDD = 400V, ID = 24A ns 230 RG = 4.7Ω , VGG = 15V 6 70 Source-Drain Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage trr Reverse Recovery Time Test Conditions MOSFET symbol reverse p-n junction diode (body diode) 050-8161 Rev A 9-2007 dv/dt Max Reverse Recovery Charge 173 TJ = 25°C 320 370 TJ = 125°C 590 710 TJ = 25°C 1.91 TJ = 125°C 5.18 TJ = 25°C 12.1 TJ = 125°C 18.1 ISD ≤ 24A, di/dt ≤1000A/μs, VDD = 400V, TJ = 125°C 1 2 3 4 5 Microsemi reserves the right to change, without notice, the specifications and information contained herein. V nS μC A 25 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. Starting at TJ = 25°C, L = 6.9mH, RG = 25Ω, IAS = 24A. Pulse test: Pulse Width < 380μs, duty cycle < 2%. Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.32E-8/VDS^2 + 3.49E-8/VDS + 1.30E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Downloaded from Elcodis.com electronic components distributor A S 1.0 Reverse Recovery Current Peak Recovery dv/dt G 0.8 diSD/dt = 100A/μs Unit 44 ISD = 24A, TJ = 25°C, VGS = 0V VDD = 100V Irrm Typ showing the integral ISD = 24A 3 Qrr Min D V/ns 100 V GS T = 125°C ID, DRIAN CURRENT (A) TJ = 25°C 40 20 TJ = 150°C 5.5V 30 20 5V 10 4.5V TJ = 125°C 4V 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 3.0 0 NORMALIZED TO VGS = 10V @ 24A VDS> ID(ON) x RDS(ON) MAX. 250μSEC. PULSE TEST @