APT45GP120B2DQ2G

APT45GP120B2DQ2(G) 1200V TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2 APT45GP120B2DQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 100 kHz operation @ 800V, 16A • Low Gate Charge • 50 kHz operation @ 800V, 28A • Ultrafast Tail Current shutoff • RBSOA Rated G C E C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT45GP120B2DQ2(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current I C2 Continuous Collector Current @ TC = 110°C I CM RBSOA PD TJ,TSTG TL Pulsed Collector Current 1 7 @ TC = 25°C UNIT Volts 113 54 @ TC = 150°C Amps 170 Reverse Biad Safe Operating Area @ TJ = 150°C 170A @ 960V Total Power Dissipation Watts 625 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 750µA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES MAX 4.5 6 3.3 3.9 Units 1200 (VCE = VGE, I C = 1mA, Tj = 25°C) 3 Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) TYP 3.0 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Volts 750 2 Gate-Emitter Leakage Current (VGE = ±20V) 3000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA nA 6-2005 V(BR)CES MIN Rev A Characteristic / Test Conditions 050-7433 Symbol DYNAMIC CHARACTERISTICS Symbol APT45GP120B2DQ2(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge RBSOA td(on) tr td(off) tf Eon1 55 Gate Charge 7.5 VGE = 15V 185 900 905 Inductive Switching (125°C) 18 VCC =600V 29 VGE = 15V 150 RG = 5Ω 80 900 I C = 45A Eon1 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy 44 55 µJ 1870 6 Current Fall Time ns 38 TJ = +25°C Turn-off Delay Time nC 100 RG = 5Ω Current Rise Time V A 29 I C = 45A Turn-on Delay Time pF 170 18 5 UNIT 80 VCC = 600V 4 MAX 25 Inductive Switching (25°C) Current Fall Time Turn-off Switching Energy tf f = 1 MHz TJ = 150°C, R G = 5Ω, VGE = Turn-off Delay Time Eoff td(off) 300 VGE = 15V Turn-on Switching Energy (Diode) tr VGE = 0V, VCE = 25V 15V, L = 100µH,VCE = 960V Current Rise Time Eon2 td(on) 3995 I C = 45A Turn-on Delay Time TYP Capacitance VCE = 600V Reverse Bias Safe Operating Area Turn-on Switching Energy MIN TJ = +125°C ns µJ 3080 6 2255 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .20 RθJC Junction to Case (DIODE) .61 WT Package Weight 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 050-7433 Rev A 6-2005 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. 90 90 80 80 IC, COLLECTOR CURRENT (A) 50 TJ = 25°C 40 TJ = 125°C 30 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) TJ = -55°C 100 80 TJ = 25°C 60 40 TJ = 125°C 20 0 5 2 3 4 5 6 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics TJ = 25°C. 250µs PULSE TEST