APT45GP120J

APT45GP120J 1200V E E ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 50 kHz operation @ 800V, 16A • Low Gate Charge • 20 kHz operation @ 800V, 30A • Ultrafast Tail Current shutoff • RBSOA rated 27 2 T- C G SO "UL Recognized" ISOTOP ® C G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±20 VGEM Gate-Emitter Voltage Transient ±30 IC1 Continuous Collector Current @ TC = 25°C 75 IC2 Continuous Collector Current @ TC = 110°C 34 ICM Pulsed Collector Current RBSOA PD TJ,TSTG TL UNIT APT45GP120J 1 Volts Amps 170 @ TC = 25°C 170A @ 960V Reverse Bias Safe Operating Area @ TJ = 150°C Watts 329 Total Power Dissipation -55 to 150 Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) 1200 VGE(TH) Gate Threshold Voltage VCE(ON) ICES I GES TYP MAX 4.5 6 Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 25°C) 3.3 3.9 Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 125°C) 3.0 3 (VCE = VGE, I C = 1mA, Tj = 25°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 500 2 Gate-Emitter Leakage Current (VGE = ±20V) Volts µA 2500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT nA 6-2003 MIN Rev C Characteristic / Test Conditions 050-7430 Symbol APT45GP120J DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions 3935 VGE = 0V, VCE = 25V 300 Reverse Transfer Capacitance f = 1 MHz 55 Gate-to-Emitter Plateau Voltage Gate Charge VGE = 15V 7.5 185 VCE = 600V 25 I C = 45A 80 Input Capacitance Coes Output Capacitance Cres VGEP Qge Qgc RBSOA TYP Capacitance Cies Qg MIN Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller ") Charge Safe Operating Area TJ = 150°C, R G = 5Ω, VGE = MAX UNIT pF V nC 170 A 15V, L = 100µH,VCE = 960V td(on) tr td(off) tf Turn-on Delay Time Current Rise Time Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy td(on) Turn-on Delay Time Eon1 Eon2 Eoff 102 I C = 45A 38 µJ 904 Inductive Switching (125°C) VCC = 600V 18 VGE = 15V 151 I C = 45A 79 Turn-off Delay Time Current Fall Time Turn-off Switching Energy 1869 6 29 R G = 5Ω 44 Turn-on Switching Energy (Diode) ns 900 TJ = +25°C 5 Current Rise Time Turn-on Switching Energy 29 R G = 5Ω 4 Eon2 tf VGE = 15V Current Fall Time Turn-on Switching Energy td(off) 18 Turn-off Delay Time Eon1 tr Inductive Switching (25°C) VCC = 600V 55 ns 900 TJ = +125°C 3078 66 µJ 2254 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RΘJC Junction to Case (IGBT) .38 RΘJC Junction to Case (DIODE) N/A Package Weight 29.2 WT UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.) 050-7430 Rev C 6-2003 APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 90 70 60 50 TC=25°C 40 TC=125°C 30 20 10 50 TC=25°C 40 TC=125°C 30 20 0 FIGURE 1, Output Characteristics(VGE = 15V) 160 FIGURE 2, Output Characteristics (VGE = 10V) 16 80 TJ = 25°C 60 TJ = 125°C 40 20 0 5 IC = 90A TJ = 25°C. 250µs PULSE TEST