APT47N60BC3G

APT47N60BC3(G) APT47N60SC3(G) 600V 47A 0.070Ω Super Junction MOSFET TO -24 7 D 3 PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D • Extreme dv/dt Rated • Popular TO-247 or Surface Mount D3 package. G • RoHS Compliant S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT47N60BC3_SC3(G) UNIT 600 Volts Drain-Source Voltage 47 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±20 Gate-Source Voltage Transient ±30 Total Power Dissipation @ TC = 25°C 417 Watts Linear Derating Factor 3.33 W/°C VGSM PD TJ,TSTG TL dv /dt 141 Operating and Storage Junction Temperature Range 7 EAR Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy °C 260 Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125°C) Repetitive Avalanche Current EAS -55 to 150 Lead Temperature: 0.063" from Case for 10 Sec. IAR Volts 50 V/ns 20 Amps 1 4 mJ 1800 STATIC ELECTRICAL CHARACTERISTICS BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) Drain-Source On-State Resistance 2 TYP 600 (VGS = 10V, ID = 30A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 0.06 0.07 0.5 25 Ohms μA 250 Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) 2.10 3 ±100 nA 3.9 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." Microsemi Website - http://www.microsemi.com UNIT Volts Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TJ = 150°C) Gate Threshold Voltage (VDS = VGS, ID = 2.7mA) MAX 050-7144 Rev F 3-2012 Symbol DYNAMIC CHARACTERISTICS Symbol APT47N60BC3_SC3(G) Characteristic Test Conditions Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time 29 ID = 47A @ 25°C 18 VGS = 13V 27 VDD = 380V RG = 1.8Ω Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 8 INDUCTIVE SWITCHING @ 25°C 6 670 VDD = 400V, VGS = 15V 6 ns 110 ID = 47A @ 125°C Fall Time nC 110 RESISTIVE SWITCHING Turn-off Delay Time pF 260 VDD = 300V Rise Time UNIT 210 VGS = 10V Qgd tf 2565 f = 1 MHz 3 MAX 7015 VGS = 0V Gate-Source Charge td(off) TYP VDS = 25V Qgs tr MIN ID = 47A, RG = 5Ω 980 INDUCTIVE SWITCHING @ 125°C 1100 VDD = 400V VGS = 15V ID = 47A, RG = 5Ω μJ 1200 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions MIN ISM Pulsed Source Current VSD Diode Forward Voltage 2 (Body Diode) 141 (VGS = 0V, IS = - 47A) 1.2 t rr Reverse Recovery Time (IS = -47A, dl S/dt = 100A/μs, VR = 350V) Q rr Reverse Recovery Charge (IS = -47A, dl S/dt = 100A/μs, VR = 350V) /dt Peak Diode Recovery dv /dt MAX 47 Continuous Source Current (Body Diode) 1 dv TYP 580 Amps Volts ns μC 23 5 UNIT 6 V/ns THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.30 62 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.25 0.7 0.20 0.5 Note: 0.10 0.3 0.05 0.1 P DM Z JC, THERMAL IMPEDANCE (°C/W) θ 3-2012 050-7144 Rev F 0.9 0.15 SINGLE PULSE 0 10-5 t1 t2 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.05 10-4 °C/W 4 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID47A di/dt ≤ 700A/μs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f Microsemi Reserves the right to change, without notice, the specifications and information contained 0.35 0.30 UNIT 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves ID, DRAIN CURRENT (AMPERES) 180 APT47N60BC3_SC3(G) VGS =15 & 10V 6.5V 160 140 6V 120 100 5.5V 80 5V 60 40 4.5V 20 4V 100 80 TJ = -55°C 60 TJ = +25°C 40 TJ = +125°C 20 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 5, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 3 GS 1.30 = 10V @ 23.5A 1.20 1.10 VGS=10V 1.00 VGS=20V 0.90 0.80 0 10 20 30 40 50 60 70 80 90 ID, DRAIN CURRENT (AMPERES) FIGURE 4, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 D V GS ID, DRAIN CURRENT (AMPERES) (NORMALIZED) NORMALIZED TO V I = 47A = 10V 2.5 2.0 1.5 1.0 0.5 0 -50 1.40 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, ON-RESISTANCE vs. TEMPERATURE 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, THRESHOLD VOLTAGE vs TEMPERATURE 050-7144 Rev F 3-2012 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @