APT48M80B2

APT48M80B2 APT48M80L 800V, 48A, 0.20Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar strip design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. T-Max® TO-264 APT48M80B2 APT48M80L D Single die MOSFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low RDS(on) • Buck converter • Ultra low Crss for improved noise immunity • Two switch forward (asymmetrical bridge) • Low gate charge • Single switch forward • Avalanche energy rated • Flyback • RoHS compliant • Inverters Absolute Maximum Ratings Symbol Parameter Ratings Unit Continuous Drain Current @ TC = 25°C 48 Continuous Drain Current @ TC = 100°C 29 IDM Pulsed Drain Current 1 173 VGS Gate - Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1979 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 24 A ID A Thermal and Mechanical Characteristics Min Typ Max Unit W PD Total Power Dissipation @ TC = 25°C - - 1135 RθJC Junction to Case Thermal Resistance - - 0.11 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface - 0.11 - -55 - 150 - - 300 - 0.22 - oz - 6.2 - g - - 10 in·lbf - - 1.1 N·m Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque (TO-264 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com Downloaded from Elcodis.com electronic components distributor °C 9-2007 TJ, TSTG °C/W Rev A Characteristic 050-8162 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter VBR(DSS) Drain-Source Breakdown Voltage ∆VBR(DSS)/∆TJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ 3 IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Symbol Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Min VGS = 0V, ID = 250μA 800 Co(cr) Co(er) 5 Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf V 0.87 VGS = 10V, ID = 24A 0.17 0.20 Ω 4 5 V 3 V/°C -10 mV/°C VDS = 800V TJ = 25°C 100 VGS = 0V TJ = 125°C 500 Test Conditions Min VDS = 50V, ID = 24A μA ±100 nA Current Rise Time Turn-Off Delay Time Current Fall Time Typ Max Unit S 43 9330 VGS = 0V, VDS = 25V f = 1MHz 160 930 Effective Output Capacitance, Energy Related Total Gate Charge Unit TJ = 25°C unless otherwise specified Effective Output Capacitance, Charge Related Qg Max Reference to 25°C, ID = 250μA Output Capacitance 4 Typ VGS = ±30V Parameter gfs Test Conditions VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient APT48M80B2_L pF 440 VGS = 0V, VDS = 0V to 533V 220 305 VGS = 0 to 10V, ID = 24A, VDS = 400V 51 nC 155 55 Resistive Switching 75 VDD = 400V, ID = 24A ns 230 RG = 2.2Ω , VGG = 15V 6 70 Source-Drain Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge dv/dt Test Conditions MOSFET symbol Min Typ Max showing the integral G reverse p-n junction diode (body diode) Peak Recovery dv/dt 173 S 0.8 ISD = 24A 3 970 nS diSD/dt = 100A/μs, TJ = 25°C 22 μC ISD ≤ 24A, di/dt ≤1000A/μs, VDD = 533V, TJ = 125°C 1.0 10 9-2007 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. Starting at TJ = 25°C, L = 6.9mH, RG = 25Ω, IAS = 24A. Pulse test: Pulse Width < 380μs, duty cycle < 2%. Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.32E-8/VDS^2 + 3.49E-8/VDS + 1.30E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 050-8162 Rev A A ISD = 24A, TJ = 25°C, VGS = 0V 1 2 3 4 5 Downloaded from Elcodis.com electronic components distributor Unit 48 D V V/ns V GS = 10V T = 125°C J TJ = -55°C 80 V = 10&15V GS 6V 5.5V 40 ID, DRIAN CURRENT (A) ID, DRAIN CURRENT (A) APT48M80B2_L 50 100 TJ = 25°C 60 40 TJ = 125°C 20 TJ = 150°C 30 5V 20 10 4.5V 4V 0 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 Figure 2, Output Characteristics 160 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. 250μSEC. PULSE TEST @