APT5010B2FLL
APT5010LFLL
500V 46A 0.100
POWER MOS 7
R
FREDFET
B2FLL
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular T-MAX or TO-264 Package
FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
T-MAX
LFLL
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT5010B2FLL_LFLL
UNIT
Drain-Source Voltage
500
Volts
ID
Continuous Drain Current @ TC = 25°C
46
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
520
Watts
Linear Derating Factor
4.0
W/°C
VDSS
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
Amps
184
-55 to 150
°C
300
Amps
50
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
1600
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA)
500
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 23A)
TYP
MAX
UNIT
Volts
0.100
Ohms
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
µA
APT5010B2FLL_LFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
Ciss
Input Capacitance
VGS = 0V
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
3
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
RESISTIVE SWITCHING
VGS = 15V
VDD = 250V
tf
ID = 46A@ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
nC
ns
3
RG = 0.6
Eon
UNIT
pF
60
95
24
50
11
15
25
ID = 46A @ 25°C
Turn-off Delay Time
MAX
4360
895
VDD = 250V
Rise Time
td(off)
TYP
VGS = 10V
Qgs
tr
MIN
INDUCTIVE SWITCHING @ 25°C
545
VDD = 333V, VGS = 15V
ID = 46A, RG = 5
510
INDUCTIVE SWITCHING @ 125°C
µJ
845
VDD = 333V VGS = 15V
ID = 46A, RG = 5
595
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
184
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -46A)
1.3
Volts
15
V/ns
dv/
Peak Diode Recovery
dt
dv/
dt
46
5
t rr
Reverse Recovery Time
(IS = -46A, di/dt = 100A/µs)
Tj = 25°C
280
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -46A, di/dt = 100A/µs)
Tj = 25°C
2.28
Tj = 125°C
6.41
IRRM
Peak Recovery Current
(IS = -46A, di/dt = 100A/µs)
Tj = 25°C
15.7
Tj = 125°C
23.6
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
R
JC
Junction to Case
R
JA
Junction to Ambient
MIN
TYP
MAX
0.25
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.30
0.9
0.20
0.7
0.15
0.5
0.10
0.3
0.05
0.1
0.05
0
10-5
Note:
t1
t2
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 1.51mH, RG = 25 , Peak IL = 46A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS -ID46A di/dt 700A/µs VR 500V TJ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.25
UNIT
Duty Factor D = t1/t2
Peak TJ = PDM x Z JC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
Junction
temp. ( C)
APT5010B2FLL_LFLL
120
15 &10V
RC MODEL
100
0.0131
7.5V
0.00266F
80
0.0789
0.00584F
Power
(watts)
0.0811
0.0796F
8V
7V
60
6.5V
40
6V
20
0.230
0
Case temperature. ( C)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@
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