APT5010B2LLG

APT5010B2LL APT5010LLL 500V 46A POWER MOS 7 R MOSFET B2LL T-MAX™ ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg TO-264 LLL D • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package MAXIMUM RATINGS Symbol 0.100Ω G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT5010B2LL_LLL UNIT Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25°C 46 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 520 Watts Linear Derating Factor 4.0 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 184 -55 to 150 °C 300 Amps 50 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 1600 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 23A) TYP MAX Volts 0.100 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 5 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 9-2004 Characteristic / Test Conditions 050-7011 Rev D Symbol DYNAMIC CHARACTERISTICS Symbol APT5010B2LL_LLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 895 Reverse Transfer Capacitance f = 1 MHz 60 VGS = 10V 95 VDD = 250V 24 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) ID = 46A @ 25°C td(off) tf 15 VDD = 250V RG = 0.6Ω Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 6 ns 25 ID = 46A @ 25°C Turn-off Delay Time nC 11 VGS = 15V Rise Time pF 50 RESISTIVE SWITCHING Turn-on Delay Time tr UNIT 4360 VGS = 0V 3 MAX 3 INDUCTIVE SWITCHING @ 25°C 545 VDD = 333V, VGS = 15V ID = 46A, RG = 5Ω 510 INDUCTIVE SWITCHING @ 125°C 845 VDD = 333V, VGS = 15V ID = 46A, RG = 5Ω µJ 595 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 46 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -46A, dl S /dt = 100A/µs) 608 ns Q rr Reverse Recovery Charge (IS = -46A, dl S/dt = 100A/µs) 11.0 µC dv/ Peak Diode Recovery dt dv/ 184 (Body Diode) (VGS = 0V, IS = - 46A) dt 1.3 5 Amps Volts 8 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.25 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 1.51mH, RG = 25Ω, Peak IL = 46A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID46A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.20 0.7 0.15 0.5 Note: 0.10 0.3 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7011 Rev D 9-2004 0.30 0.25 0.05 0.1 0.05 0 10-5 t1 t2 SINGLE PULSE 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 1.0 Typical Performance Curves 0.0131 0.0789 0.00266F 0.00584F Power (watts) 0.0811 0.230 0.0796F 0.460F ID, DRAIN CURRENT (AMPERES) Junction temp. (°C) 100 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @