APT5010JFLL

APT5010JFLL 500V 41A 0.100Ω POWER MOS 7 R FREDFET S S ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 27 2 T- D G D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT5010JFLL UNIT Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25°C 41 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 378 Watts Linear Derating Factor 3.03 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 164 -55 to 150 °C 300 Amps 41 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 35 4 mJ 1600 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 20.5A) TYP MAX UNIT Volts 0.100 Ohms Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Downloaded from Elcodis.com electronic components distributor µA 9-2004 Characteristic / Test Conditions 050-7029 Rev E Symbol APT5010JFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions Ciss Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge 3 Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time RESISTIVE SWITCHING VGS = 15V VDD = 300V tf ID = 41A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 485 VDD = 333V, VGS = 15V 455 ID = 41A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C 6 nC 3 RG = 0.6Ω Eon UNIT pF 60 95 24 50 11 13 25 ID = 41A @ 25°C Turn-off Delay Time MAX 4360 895 VDD = 300V Rise Time td(off) TYP VGS = 10V Qgs tr MIN µJ 755 VDD = 333V VGS = 15V ID = 41A, RG = 5Ω 530 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Symbol MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 164 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -41A) 1.3 Volts 15 V/ns dv/ Peak Diode Recovery dt dv/ dt 41 5 t rr Reverse Recovery Time (IS = -41A, di/dt = 100A/µs) Tj = 25°C 280 Tj = 125°C 600 Q rr Reverse Recovery Charge (IS = -41A, di/dt = 100A/µs) Tj = 25°C 2.28 Tj = 125°C 6.41 IRRM Peak Recovery Current (IS = -41A, di/dt = 100A/µs) Tj = 25°C 15.7 Tj = 125°C 23.6 Amps ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient MIN TYP MAX 0.33 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.7 0.20 0.5 Note: 0.15 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7029 Rev E 9-2004 0.35 0.25 0.3 0.10 0.05 0 t2 0.1 10-5 t1 Duty Factor D = t1/t2 SINGLE PULSE 0.05 10-4 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 4 Starting Tj = +25°C, L = 1.65mH, RG = 25Ω, Peak IL = 41A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID41A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.30 UNIT 1.0 Typical Performance Curves APT5010JFLL RC MODEL Junction temp. (°C) 0.0988 0.0196F Power (watts) 0.230 0.381F ID, DRAIN CURRENT (AMPERES) 120 15 &10V 8V 100 7.5V 80 7V 60 6.5V 40 6V 20 5.5V Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @