APT5010JLL

APT5010JLL 500V 41A 0.100Ω POWER MOS 7 R MOSFET ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg 27 2 T- D G SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS Symbol S S G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT5010JLL UNIT Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25°C 41 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 378 Watts Linear Derating Factor 3.03 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 164 -55 to 150 °C 300 Amps 41 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 35 4 mJ 1600 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 20.5A) TYP MAX Volts 0.100 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 9-2004 Characteristic / Test Conditions 050-7018 Rev F Symbol DYNAMIC CHARACTERISTICS Symbol APT5010JLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 895 Crss Reverse Transfer Capacitance f = 1 MHz 60 VGS = 10V 95 VDD = 250V 24 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr ID = 41A @ 25°C td(off) tf 13 VDD = 250V RG = 0.6Ω Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 3 INDUCTIVE SWITCHING @ 25°C 6 485 VDD = 333V, VGS = 15V 6 ns 25 ID = 41A @ 25°C Fall Time nC 11 VGS = 15V Turn-off Delay Time pF 50 RESISTIVE SWITCHING Rise Time UNIT 4360 VGS = 0V 3 MAX ID = 41A, RG = 5Ω 455 INDUCTIVE SWITCHING @ 125°C 755 VDD = 330V, VGS = 15V ID = 41A, RG = 5Ω µJ 530 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 41 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -41A, dl S /dt = 100A/µs) 608 ns Q rr Reverse Recovery Charge (IS = -41A, dl S/dt = 100A/µs) 11.0 µC dv/ Peak Diode Recovery dt dv/ 164 (Body Diode) (VGS = 0V, IS = - 41A) dt 1.3 5 Amps Volts 8 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.33 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 1.90mH, RG = 25Ω, Peak IL = 41A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID41A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.25 0.7 0.20 0.5 Note: 0.15 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7018 Rev F 9-2004 0.35 0.30 0.3 0.10 0.05 0 t2 0.1 10-5 t1 Duty Factor D = t1/t2 SINGLE PULSE 0.05 10-4 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 1.0 Typical Performance Curves APT5010JLL RC MODEL Junction temp. (°C) 0.0988 0.0196F Power (watts) 0.230 0.381F ID, DRAIN CURRENT (AMPERES) 120 15 &10V 8V 100 7.5V 80 7V 60 6.5V 40 6V 20 5.5V Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @