APT5014BLLG

Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain and enhance this position as a technological leader in MOS controlled devices and Diodes and to deliver products which contribute to our customers’ success in delivering higher performance power systems. Service… Outstanding technology is only part of the story. A global network of stocking distributors, representatives, applications engineers, and web tools are in place to support all phases of your product design, evaluation and procurement activities. In a world which demands superior execution, we’ve won numerous awards as a service leader. Quality… Our commitment is to excellence in all things we do. Whether you are evaluating the quality of our products, our technical assistance, our customer service or the quality of our internal communications systems, excellence is our standard. Continuous improvement is fundamental to our business! CONTENTS HIGH VOLTAGE SMPS TRANSISTORS Page No. IGBTs (Insulated Gate Bipolar Transistors) ......................................................................3-5 Power MOS 8TM MOSFETs / FREDFETs ............................................................................6-8 Ultra Low Gate Charge MOSFETs ...................................................................................... 9 COOLMOSTM MOSFETs..................................................................................................... 10 High Voltage Linear MOSFETs ......................................................................................... 10 DIODES Ultra Fast Recovery Diodes ........................................................................................11-13 HIGH VOLTAGE RF MOSFETS ........................................................................................ 14 DRIVER-RF MOSFET HYBRIDS ...................................................................................... 14 HIGH FREQUENCY RF MOSFETS .................................................................................. 15 REFERENCE DESIGN KIT .............................................................................................. 15 POWER MODULES ................................................................................................. 16-17 IGBTs (Insulated Gate Bipolar Transistors) ................................................................18-22 MOSFETs ....................................................................................................................23-27 Renewable Energy Power Modules ................................................................................. 28 Power Modules with SiCSchottky Diodes ...................................................................29-30 Diodes .......................................................................................................................31-33 Dual IGBT Isolated Driver ................................................................................................ 34 PACKAGE OUTLINE DRAWINGS .............................................................................. 35-39 “COOLMOS” comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG” ASPM®, Power MOS V®, Power MOS 7® & T-MAX® are registered trademarks of Microsemi Corporation Insulated Gate Bipolar Transistors (IGBTs) IGBTs from Microsemi Power Products Group (PPG) IGBT products from Microsemi PPG provide high quality solutions for a wide range of high voltage, high power applications. The switching frequency range spans from DC for minimal conduction loss to over 100kHz for very high power density SMPS applications. The frequency range for each product type is shown in the graph below. Each IGBT product represents the latest in IGBT technology, providing the best possible performance/cost combination for the targeted application. There are six product series that utilize three different IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and Field Stop. IGBT Switching Frequency Ranges (kHz, hard switched) 10 20 30 40 50 60 70 80 90 100 110 120 Field Stop Thunderbolt® NPT 600V Thunderbolt® High Speed (HS) NPT Power MOS 8TM PT Power MOS 8TM PT 900V Field Stop 1200V Fast NPT Power MOS 7TM PT Thunderbolt® NPT Standard Series Voltage Ratings (V) Technology Easy to Parallel Thunderbolt® 600, 1200 NPT X X General purpose, high speed Thundebolt® High Speed 600 NPT X X Highest speed FAST 1200 NPT X X General purpose, medium speed MOS 7™ 1200 PT Ultra-low gate charge MOS 8™ 600, 900 PT Highest efficiency Field Stop Trench Gate 600, 1200 Field Stop X Short Circuit Comment SOA X Lowest conduction loss Product Options All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series diode. Package options include TO-220, TO-247, T-Max®, TO-264, and SOT-227. Customized products are available; contact factory for details. Resonant Mode Combi Resonant Mode Combi products, which are high speed IGBTs packaged with a low VF anti-parallel DL series diode. These Combis are intended for use in resonant mode circuits, such as the phase shifted bridge, where fast turn-off of the IGBT is needed but the recovery speed of the anti-parallel diode is less important than its forward voltage. Resonant Mode IGBTs maximize efficiency by reducing turn-off switching loss in the IGBT and minimizing conduction loss of the anti-parallel diode. The table below summarizes the key features and technology for the Resonant Mode IGBT products. Resonant Mode Series Voltage Ratings (V) Technology Easy to Parallel Short Circuit Comment SOA Thunderbolt® 600, 1200 NPT X X General purpose, high speed Thunderbolt® High Speed 600 NPT X X Highest speed MOS 7 600 PT Highest efficiency 3 Insulated Gate Bipolar Transistors (IGBTs) BVCES Volts POWER MOS 8TM s 044ECHNOLOGY s &AST3WITCHING s (IGHEST%FlCIENCY s #OMBIWITH(IGH 3PEED$1$IODE VCE(ON) Typ 25OC IC2 100oC SINGLE Recommended Maximum IC 50 kHz 600 2.0 2.0 2.0 2.0 2.0 2.0 2.0 28 36 44 54 68 80 102 900 2.5 2.5 2.5 2.5 2.5 27 35 43 64 80 19 21 26 30 35 40 51 25 kHz Combi (IGBT & "DQ" FRED) 600 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 28 36 44 47 54 60 68 80 2.5 2.5 2.5 2.5 2.5 2.5 27 35 43 46 64 80 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 24 37 64 93 123 135 190 230 158 1.7 1.7 1.7 1.7 1.7 1.7 1.7 33 46 66 70 99 120 99 14 17 21 29 34 50 kHz 19 21 26 39 30 48 35 40 25 kHz 900 FIELD STOP s 4RENCH4ECHNOLOGY s 3HORT#IRCUIT 2ATED s ,OWEST #ONDUCTION,OSS s %ASY0ARALLELING s #OMBIWITH(IGH 3PEED$1$IODE SINGLE 600 14 17 21 33 29 34 15 kHz 15 20 30 42 75 54 79 103 100 10 kHz 1200 Combi (IGBT & "DQ" FRED) 600 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 24 37 64 93 123 135 190 158 1.7 1.7 1.7 1.7 1.7 1.7 1.7 22 33 46 57 66 70 99 19 24 32 44 45 58 60 15 kHz 15 20 30 42 75 54 79 100 10 kHz 1200 14 19 24 36 32 44 60 Part Number Package Style 80 kHz 14 17 20 23 27 31 39 APT28GA60K APT36GA60B APT44GA60B APT54GA60B APT68GA60B APT80GA60B APT102GA60B2 TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 T-MAX® or TO-264 APT27GA90K APT35GA90B APT43GA90B APT64GA90B APT80GA90B TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 APT28GA60BD15 APT36GA60BD15 APT44GA60BD30 APT47GA60JD40 APT54GA60BD30 APT60GA60JD60 APT68GA60B2D40 APT80GA60LD40 TO-247 or D3 TO-247 or D3 TO-247 or D3 ISOTOP® TO-247 or D3 ISOTOP® T-MAX® or TO-264 TO-264 APT27GA90BD15 APT35GA90BD15 APT43GA90BD30 APT46GA90JD40 APT64GA90B2D30 APT80GA90LD40 TO-247 or D3 TO-247 or D3 TO-247 or D3 ISOTOP® T-MAX® or TO-264 TO-264 APT20GN60BG APT30GN60BG APT50GN60BG APT75GN60BG APT150GN60J APT100GN60B2G APT150GN60B2G APT200GN60B2G APT200GN60J TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 ISOTOP® T-MAX® T-MAX® T-MAX® ISOTOP® APT25GN120BG APT35GN120BG APT50GN120B2G APT100GN120J APT75GN120B2G APT100GN120B2G APT150GN120J TO-247 or D3 TO-247 or D3 T-MAX® ISOTOP® T-MAX® or TO-264 T-MAX® ISOTOP® APT20GN60BDQ1G APT30GN60BDQ2G APT50GN60BDQ2G APT75GN60LDQ3G APT150GN60JDQ4 APT100GN60LDQ4G APT150GN60LDQ4G APT200GN60JDQ4 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-264 ISOTOP® TO-264 TO-264 ISOTOP® APT15GN120BDQ1G APT25GN120B2DQ2G APT35GN120L2DQ2G APT75GN120JDQ3 APT50GN120L2DQ2G APT100GN120JDQ4 APT150GN120JDQ4 TO-247 or D3 T-MAX® 264-MAX™ ISOTOP® 264-MAX™ ISOTOP® ISOTOP® TO-220 50 kHz 8 10 13 19 23 TO-247[B] 80 kHz 14 17 20 30 23 36 27 31 50 kHz 8 10 13 21 19 23 D3 PAK[S] Part Numbers for D3 packages - replace B” with “S” in part number 30 kHz 10 14 21 30 47 39 57 75 66 T-MAX®[B2] 20 kHz 13 17 22 27 30 38 36 TO-264[L] 30 kHz 10 14 21 30 47 39 57 66 264-MAXTM[L2] Part Numbers for TO-264 packages replace "B2" with "L" in part number 20 kHz 10 13 17 22 22 27 36 ISOTOP®[J] SOT-227 C Current @ Frequency Test Conditions: Tj = 125oC, Tc = 100oC except Isotop® where Tc = 80oC, Vcc = 67% rated voltage Hard Switch G E Datasheets available on www.microsemi.com 4 All Products RoHS Compliant Insulated Gate Bipolar Transistors (IGBTs) BVCES Volts Power MOS 7® and IGBT SINGLE s 044ECHNOLOGY s 5LTRA LOW'ATE #HARGE s #OMBIWITH(IGH 3PEED$1$IODE 1200 s .044ECHNOLOGY s 3HORT#IRCUIT 2ATED s -ODERATETO(IGH &REQUENCY s %ASY0ARALLELING 3.3 3.3 3.3 3.3 3.3 3.3 IC2 100oC 33 46 54 34 91 57 Combi (IGBT & "DQ" FRED) 1200 THUNDERBOLT® VCE(ON) Typ 25oC 3.3 3.3 3.3 3.3 3.3 3.3 20 33 46 54 34 57 2.0 2.0 2.0 2.0 2.0 2.0 2.0 20 20 30 40 50 60 100 3.2 3.2 3.2 3.2 3.2 18 25 50 60 90 SINGLE 600 1200 Combi (IGBT & "DQ" FRED) 600 1200 THUNDERBOLT® HIGH SPEED s (IGH3PEED 3WITCHING 2EDUCED%OFF s &ASTEST3WITCHING s .044ECHNOLOGY FAST s .044ECHNOLOGY s 3HORT#IRCUIT2ATED s ,OWTO-ODERATE&REQ s ,OW#ONDUCTION,OSS s %ASY0ARALLELING RESONANT MODE COMBI IGBTs s .04OR044ECHNOLOGY s ,OW6&$IODE s5LTRASOFT2ECOVERY $IODE s!VALANCHE2ATED s(IGH3PEED 3WITCHING 2EDUCED%OFF 2.0 2.0 2.0 2.0 2.0 2.0 15 20 30 48 50 100 3.2 3.2 3.2 3.2 3.2 18 25 50 42 60 2.8 2.8 30 50 SINGLE 600 Combi (IGBT & "DQ" FRED) 600 2.8 2.8 30 50 2.5 2.5 2.5 2.5 2.5 14 20 35 75 75 SINGLE 1200 Combi (IGBT & "DQ" FRED) 1200 2.5 2.5 2.5 35 64 80 Combi (IGBT & "DL" FRED) 600 2.8 2.8 2.2 2.2 2.2 50 30 50 45 25 1200 3.2 3.2 3.2 25 50 100 Recommended Maximum IC 20 kHz 19 24 29 28 42 40 20 kHz 11 19 24 29 28 40 40 kHz 12 15 18 18 24 23 40 kHz 7 12 15 18 18 23 30 kHz 14 14 19 25 30 35 56 20 kHz 11 16 27 40 52 30 kHz 11 14 19 29 30 37 20 kHz 11 16 27 34 40 50 kHz 14 23 50 kHz 14 23 15 kHz 60 kHz 10 10 13 16 20 22 35 40 kHz 8 11 17 21 25 60 kHz 8 10 13 18 20 22 40 kHz 8 11 17 19 21 80 kHz 9 16 80 kHz 9 16 30 kHz 8 11 16 27 27 15 kHz 16 33 42 50 kHz 23 14 41 28 17 20 kHz 16 28 40 5 7 10 17 17 30 kHz 10 17 20 80 kHz 16 9 31 22 14 40 kHz 11 17 21 Part Number Package Style APT25GP120BG APT35GP120BG APT45GP120BG APT45GP120J APT75GP120B2G APT75GP120J T0-247 T0-247 T0-247 ISOTOP T-MAX™ ISOTOP TO-220[K] APT13GP120BDQ1G APT25GP120BDQ1G APT35GP120B2DQ2G APT45GP120B2DQ2G APT45GP120JDQ2 APT75GP120JDQ3 T0-247 T0-247 T-MAX™ T-MAX™ ISOTOP ISOTOP D3 PAK[S] APT20GT60KRG APT20GT60BRG APT30GT60BRG APT40GT60BRG APT50GT60BRG APT60GT60BRG APT100GT60B2RG TO-220 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 TO-247 or D3 T-MAX® or TO-264 APT15GT120BRG APT25GT120BRG APT50GT120B2RG APT100GT120JR APT150GT120JR TO-247 or D3 TO-247 or D3 T-MAX® or TO-264 ISOTOP® ISOTOP® APT15GT60BRDQ1G APT20GT60BRDQ1G APT30GT60BRDQ2G APT60GT60JRDQ3 APT50GT60BRDQ2G APT100GT60JRDQ4 TO-247 or D3 TO-247 or D3 TO-247 or D3 ISOTOP® TO-247 or D3 ISOTOP® APT15GT120BRDQ1G APT25GT120BRDQ2G APT50GT120B2RDQ2G APT75GT120JRDQ3 APT100GT120JRDQ4 TO-247 or D3 TO-247 or D3 T-MAX® or TO-264 ISOTOP® ISOTOP® APT30GS60KRG APT50GS60BRG TO-220 TO-247 or D3 APT30GS60BRDQ2G APT50GS60BRDQ2G TO-247 or D3 TO-247 or D3 APT11GF120KRG APT20GF120KRG APT33GF120BRG APT50GF120B2RG APT50GF120LRG TO-220 TO-220 TO-247 or D3 T-MAX® TO-264 APT33GF120B2RDQ2G APT50GF120JRDQ3 APT60GF120JRDQ3 T-MAX® ISOTOP® ISOTOP® APT50GS60BRDLG APT30GS60BRDLG APT50GP60LDL APT30GP60B2DL APT15GP60BDL TO-247 TO-247 TO-264 T-MAX® or TO-264 TO-247 APT25GT120BRDL APT50GT120B2RDL APT100GT120JRDL TO-247 T-MAX® ISOTOP® TO-247[B] Part Numbers for D3 packages replace "B" with "S" in part number T-MAX®[B2] TO-264[L] Part Numbers for L packages replace "B2" with "L" in part number ISOTOP®[J] SOT-227 C G o o o Current @ Frequency Test Conditions: Tj = 125 C, Tc = 100 C except Isotop® where Tc = 80 C, Vcc = 67% rated voltage Hard Switch Datasheets available on www.microsemi.com 5 All Products RoHS Compliant E NEW! NEW Power MOS 8TM MOSFETs / FREDFETs (fast body diode) TM Power MOS 8™ is Microsemi's latest family of high speed, high voltage (500-1200V) N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These new MOSFETs /FREDFETs have been optimized for both hard and soft switching in high frequency, high voltage applications rated above 500W. There are 2 product types in the Power MOS 8™ MOSFET family: 1) MOSFET 2) FREDFETs have a fast recovery body diode characteristic, providing high commutation dv/dt ruggedness and high reliability in ZVS circuits. Features s&ASTSWITCHING s,OW%-) s1UIETSWITCHING Applications s0OWERFACTORCORRECTION s3ERVERANDTELECOMPOWERSYSTEMS s3OLARINVERTERS s!RCWELDING s0LASMACUTTING s"ATTERYCHARGERS s-EDICAL s3EMICONDUCTORCAPITALEQUIPMENT s)NDUCTIONHEATING s!VALANCHEENERGYRATED s,OWGATECHARGE s,OWERCOST Quiet Switching The new Power MOS 8™ series is a result of extensive research into quiet switching. Input and reverse transfer capacitance values as well as their ratio were set at specific values to achieve quiet switching with minimal switching loss. The Power MOS 8™ series of devices are inherently quiet switching, stable when connected in parallel, very efficient, and lower cost than previous generations. Body Diode Options As with previous generation products, Power MOS 8™ MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not needed, MOSFET versions are available. 6 Power MOS 8TM MOSFETs / FREDFETs BV(DSS) Volts RDS(ON) Max ID MOSFET Part # 3.80 5 APT4M120K TO-220 APT4F120K TO-220 2.40 7 APT7F120B TO-247 or D3 1.10 8 TO-247 or D 14 14 APT14M120B 24 APT24M120B2 APT13F120B TO-247 or D3 TO-247 or D3 23 APT22F120B2 T-MAX® or TO-264 T-MAX® or TO-264 0.58 27 APT26F120B2 T-MAX® or TO-264 0.58 18 APT17F120J ISOTOP® 0.53 29 APT28M120B2 T-MAX® or TO-264 0.53 19 APT19M120J ISOTOP® 35 APT34M120J 6 APT6M100K 0.32 0.29 33 2.80 2.50 1.80 8 APT9F100B APT14F100B TO-247 TO-247 or D3 TO-247 or D3 APT17F100B TO-247 or D3 TO-247 or D3 APT18M100B 0.44 30 APT29F100B2 T-MAX® or TO-264 0.44 20 APT19F100J ISOTOP® 0.38 32 APT31M100B2 35 APT34F100B2 T-MAX® or TO-264 0.38 21 APT21M100J 23 APT22F100J ISOTOP® 0.33 37 APT37M100B2 T-MAX® or TO-264 0.33 25 APT25M100J ISOTOP® 45 APT45M100J 0.18 42 1.50 1.35 8 0.80 13 12 APT11F80B 25 ISOTOP® TO-220 TO-220 TO-247 or D3 TO-247 or D3 APT17F80B TO-247 or D3 TO-247 or D3 23 APT22F80B 41 APT38F80B2 T-MAX® or TO-264 47 APT44F80B2 T-MAX® or TO-264 31 APT29F80J ISOTOP® APT41M80B2 0.19 49 APT48M80B2 T-MAX® or TO-264 0.19 33 APT32M80J ISOTOP® 0.11 0.10 Datasheets available on www.microsemi.com 57 60 Part Numbers for TO-264 packages - replace "B2" with "L" in part number TO-247 or D3 43 0.21 TO-264[L] TO-247 or D3 APT24M80B 0.24 0.21 APT7F80K APT18M80B 0.43 0.39 7 18 19 T-MAX®[B2] ISOTOP® APT12M80B 0.58 0.53 APT41F100J APT8M80K 0.90 Part Numbers for D3 packages - replace "B” with “S” in part number TO-247 or D3 APT14M100B 0.20 D3 PAK[S] TO-247 or D3 17 18 TO-220 TO-247 or D3 APT9M100B 0.78 0.70 APT7F100B 14 14 ISOTOP® TO-220 APT8M100B 0.98 0.88 APT5F100K 9 9 TO-247[B] ISOTOP® 7 1.60 1.40 APT32F120J 5 2.00 TO-220[K] 3 APT7M120B 0.70 0.63 800 Package Style 4 1.20 1000 FREDFET Part # 4.20 2.10 1200 ID APT53F80J APT58M80J ISOTOP® ISOTOP®[J] SOT-227 (ISOLATED BASE) ISOTOP® 7 All Products RoHS Compliant Power MOS 8TM MOSFETs / FREDFETs BV(DSS) Volts 600 500 RDS(ON) Max ID MOSFET Part # ID FREDFET Part # Package 0.62 12 APT12F60K TO-220 0.43 16 APT15F60B TO-247 or D3 0.37 19 APT18F60B TO-247 or D3 0.29 24 APT23F60B TO-247 or D3 0.22 30 APT28F60B TO-247 or D3 0.19 36 APT34M60B 36 APT34F60B TO-247 or D3 0.15 45 APT43M60B2 45 APT43F60B2 T-MAX® or TO-264 0.15 31 APT30M60J 31 APT30F60J ISOTOP® 0.11 60 APT56M60B2 60 APT56F60B2 T-MAX® or TO-264 0.11 42 APT39M60J 42 APT39F60J ISOTOP® 0.09 70 APT66M60B2 70 APT66F60B2 T-MAX® or TO-264 0.09 49 APT47M60J 49 APT47F60J ISOTOP® 0.055 84 APT80M60J TO-220[K] or TO-220[KF]* TO-247[B] 84 APT80F60J ISOTOP® 0.39 15 APT15F50K TO-220[K] or TO-220[KF]* 0.30 20 APT20F50B TO-247 or D3 0.24 24 APT24F50B TO-247 or D3 3 0.19 30 APT30F50B TO-247 or D 0.15 37 APT37F50B TO-247 or D3 0.13 43 APT42F50B TO-247 or D3 0.10 56 APT56M50B2 56 APT56F50B2 T-MAX® or TO-264 0.10 38 APT38M50J 38 APT38F50J ISOTOP® 0.075 75 APT75M50B2 75 APT75F50B2 T-MAX® or TO-264 0.075 51 APT51M50J 51 APT51F50J ISOTOP® 0.062 84 APT84M50B2 84 APT84F50B2 T-MAX® or TO-264 0.062 58 APT58M50J 58 APT58F50J ISOTOP® 0.036 103 APT100M50J 103 APT100F50J ISOTOP® D3 PAK[S] Part Numbers for D3 packages - replace "B" with "S" in part number T-MAX®[B2] * Available on APT15F50K Low Voltage Power MOS V® MOSFETs / FREDFETs 300 200 0.085 40 APT30M85BVRG 40 APT30M85BVFRG TO-247 or D3 0.070 48 APT30M70BVRG 48 APT30M70BVFRG TO-247 or D3 0.040 70 APT30M40JVRG 70 APT30M40JVFRG ISOTOP® 0.019 130 APT30M19JVR 130 APT30M19JVFR ISOTOP® 0.045 56 APT20M45BVRG 56 APT20M45BVFRG TO-247 or D3 0.038 67 APT20M38BVRG 37 APT20M38BVFRG TO-247 or D3 0.022 100 APT20M22B2VRG 100 APT20M22B2VFRG T-MAX® or TO-264 0.011 175 APT20M11JVR 175 APT20M11JVFR ISOTOP® TO-264[L] Part Numbers for TO-264 packages - replace "B2" with "L" in part number ISOTOP®[J] SOT-227 (ISOLATED BASE) Datasheets available on www.microsemi.com 8 All Products RoHS Compliant Ultrafast, Low Gate Charge MOSFETs FOR 250 kHz - 2 MHz SWITCHING APPLICATIONS These devices are ideally suited for high frequency and pulsed high voltage applications. The Ultrafast, Low Gate Charge MOSFET family combines the lowest gate charge available in the industry with Microsemi’s proprietary self-aligned aluminum metal gate structure. The result is a MOSFET capable of extremely fast switching speeds and very low switching losses. The metal gate structure and the layout of these chips provide an internal series gate resistance (EGR) an order of magnitude lower than competitive devices built with a polysilicon gate. Typical Applications: s#LASS$AMPLIlERSUPTO-(Z s(IGHVOLTAGEPULSED$# s!-TRANSMITTERS s0LASMADEPOSITIONETCH FEATURES: BV(DSS) Volts 1200 1000 800 500 BENEFITS: l Series Gate Resistance (Rg)