APT5014SLLG

APT5014BLL(G) APT5014SLL(G) 500V 35A 0.140Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFET D3PAK TO-247 ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package G S All Ratings: TC = 25°C unless otherwise specified. APT5014BLL-SLL(G) Parameter UNIT Drain-Source Voltage 500 ID Continuous Drain Current @ TC = 25°C 35 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 403 Watts Linear Derating Factor 3.22 W/°C PD TJ,TSTG 1 TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Amps 140 Operating and Storage Junction Temperature Range 1 Volts -55 to 150 °C 300 Amps 35 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 17.5A) TYP MAX Volts 0.140 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 6-2004 Characteristic / Test Conditions 050-7006 Rev B Symbol APT5014 BLLBLL - SLL(G) APT5014 - SLL DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP C iss Input Capacitance Coss Output Capacitance VDS = 25V 704 Reverse Transfer Capacitance f = 1 MHz 50 VGS = 10V 72 VDD = 250V 20 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr ID = 35A @ 25°C td(off) tf 6 VDD = 250V RG = 1.6Ω Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 3 INDUCTIVE SWITCHING @ 25°C 6 325 VDD = 333V, VGS = 15V 6 ns 23 ID = 35A @ 25°C Fall Time nC 11 VGS = 15V Turn-off Delay Time pF 36 RESISTIVE SWITCHING Rise Time UNIT 3261 VGS = 0V 3 MAX ID = 35A, RG = 5Ω 249 INDUCTIVE SWITCHING @ 125°C 545 VDD = 333V, VGS = 15V ID = 35A, RG = 5Ω µJ 288 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS MIN Characteristic / Test Conditions TYP MAX 35 Continuous Source Current (Body Diode) 140 ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -35A, dl S/dt = 100A/µs) 510 Q rr Reverse Recovery Charge (IS = -35A, dl S/dt = 100A/µs) 10 dv/ dt Peak Diode Recovery dv/ (Body Diode) 1.3 (VGS = 0V, IS = -35A) dt UNIT Amps Volts ns µC 8 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.31 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 2.12mH, RG = 25Ω, Peak IL = 35A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -35A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.25 0.7 0.20 0.5 0.15 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7006 Rev B 6-2004 0.35 0.30 0.3 0.10 t1 t2 0.05 0 SINGLE PULSE 0.1 0.05 10-5 10-4 °C/W Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT5014 BLL - SLL(G) APT5014 BLL_SLL 100 RC MODEL Junction temp. (°C) 0.119 0.0135F Power (watts) 0.191 0.319F Case temperature. (°C) ID, DRAIN CURRENT (AMPERES) 15 &10V 8V 80 60 7V 6.5V 20 6V 20 5.5V 5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 80 60 40 TJ = +125°C TJ = +25°C 20 TJ = -55°C 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 30 25 20 15 10 5 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 1.10 VGS=10V 1.05 VGS=20V 1.0 0.95 0.90 0 2.5 D V 1.05 1.00 0.95 0.90 0.85 -50 = 17.5A GS = 10V 1.5 1.0 0.5 0.0 -50 1.10 1.2 I 2.0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 NORMALIZED TO = 10V @ 17.5A GS 1.15 1.15 35 0 V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 6-2004 0 1.2 050-7006 Rev B ID, DRAIN CURRENT (AMPERES) 100 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL Typical Performance Curves APT5014 BLL - SLL(G) APT5014 BLL_SLL 10,000 140 Ciss 50 100µS 10 1mS TC =+25°C TJ =+150°C SINGLE PULSE 1 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) = 35A 14 12 VDS=100V 10 VDS=250V 8 VDS=400V 6 4 2 0 0 td(off) TJ =+150°C TJ =+25°C 10 5 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE V = 333V DD R G = 5Ω T = 125°C V DD R G = 333V = 5Ω T = 125°C J 30 L = 100µH 20 tf L = 100µH 50 tr and tf (ns) 40 40 30 20 tr td(on) 0 1000 10 10 0 30 40 50 60 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD R G SWITCHING ENERGY (µJ) 50 J 10 6-2004 100 60 20 30 40 50 60 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT J EON includes diode reverse recovery. 600 Eon 400 200 Eoff 10 I DD D 20 = 333V = 35A T = 125°C J L = 100µH 0 10 V 1200 T = 125°C 800 0 1400 = 333V = 5Ω 20 30 40 50 60 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT SWITCHING ENERGY (µJ) td(on) and td(off) (ns) 50 050-7006 Rev B 200 70 60 0 Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 100 10 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 D Coss 10mS 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I 1,000 Eoff L = 100µH E ON includes 1000 diode reverse recovery. 800 Eon 600 400 200 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT5014 BLL_SLL(G) Typical Performance Curves Gate Voltage 10 % 90% T = 125 C J td(on) Gate Voltage t T = 125 C J d(off) tr Drain Voltage 90% 5% Drain Current 90% tf 10 % 10% 0 Drain Voltage Switching Energy Drain Current Switching Energy Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 V DS ID V DD G D.U.T. Figure 20, Inductive Switching Test Circuit 3 TO-247 Package Outline D PAK Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain (Heat Sink) e1 SAC: Tin, Silver, Copper 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 Drain 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Gate Drain Source 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Source Drain Gate Dimensions in Millimeters (Inches) 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated 050-7006 Rev B 0.46 (.018) 0.56 (.022) {3 Plcs} 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 6-2004 3.50 (.138) 3.81 (.150)