APT5016BFLLG

APT5016BFLL APT5016SFLL 500V 30A 0.160Ω POWER MOS 7 R FREDFET D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol TO-247 D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT5016BFLL_SFLL UNIT Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25°C 30 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 329 Watts Linear Derating Factor 2.63 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 120 -55 to 150 °C 300 Amps 30 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 15A) TYP MAX UNIT Volts 0.160 Ohms Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 6-2004 Characteristic / Test Conditions 050-7026 Rev C Symbol APT5016BFLL_SFLL DYNAMIC CHARACTERISTICS Symbol Ciss Characteristic Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg 3 Total Gate Charge Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time RESISTIVE SWITCHING VGS = 15V VDD = 250V tf ID = 30A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 256 VDD = 333V, VGS = 15V 172 ID = 30A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C 6 nC 14 RG = 1.6Ω Eon UNIT pF 60 72 16 42 10 10 27 ID = 30A @ 25°C Turn-off Delay Time MAX 2833 600 VDD = 250V Rise Time td(off) TYP VGS = 10V Qgs tr MIN µJ 476 VDD = 333V VGS = 15V ID = 30A, RG = 5Ω 215 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ Characteristic / Test Conditions MIN TYP MAX 30 Continuous Source Current (Body Diode) Amps Pulsed Source Current 1 (Body Diode) 120 Diode Forward Voltage 2 (VGS = 0V, IS = -30A) 1.3 Volts 15 V/ns Peak Diode Recovery dt UNIT dv/ 5 dt t rr Reverse Recovery Time (IS = -30A, di/dt = 100A/µs) Tj = 25°C 250 Tj = 125°C 500 Q rr Reverse Recovery Charge (IS = -30A, di/dt = 100A/µs) Tj = 25°C 1.3 Tj = 125°C 4.5 IRRM Peak Recovery Current (IS = -30A, di/dt = 100A/µs) Tj = 25°C 12 Tj = 125°C 18 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.38 RθJC Junction to Case RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.7 0.25 0.5 0.20 Note: 0.15 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7026 Rev C 6-2004 0.40 0.30 0.3 0.10 0.05 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 0 t1 t2 SINGLE PULSE 0.1 10-5 10-4 10-3 °C/W 4 Starting Tj = +25°C, L = 2.89mH, RG = 25Ω, Peak IL = 30A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID30A di/dt ≤ 700A/µs VR ≤ 500 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 UNIT 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT5016BFLL_SFLL 80 8V 0.0174 Power (watts) 0.00401F 0.143 0.00641F 0.219 0.158F ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. (°C) 15 &10V 60 7.5V 7V 40 6.5V 20 6V 5.5V Case temperature. (°C) VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @