APT5016BLLG

APT5016BLL APT5016SLL 500V 30A 0.160Ω R POWER MOS 7 MOSFET D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol TO-247 G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT5016BLL-SLL UNIT 500 Volts Drain-Source Voltage 30 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 329 Watts Linear Derating Factor 2.63 W/°C PD TJ,TSTG 120 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 °C 300 Amps 30 (Repetitive and Non-Repetitive) 1 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 15A) TYP MAX Volts 0.160 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 11-2003 Characteristic / Test Conditions 050-7005 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT5016BLL- SLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 600 Reverse Transfer Capacitance f = 1 MHz 60 VGS = 10V 72 VDD = 250V 16 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr ID = 30A @ 25°C tf 10 VDD = 250V ID = 30A @ 25°C Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 14 INDUCTIVE SWITCHING @ 25°C 6 256 VDD = 333V, VGS = 15V ID = 30A, RG = 5Ω 172 INDUCTIVE SWITCHING @ 125°C 6 ns 27 RG = 1.6Ω Fall Time nC 10 VGS = 15V Turn-off Delay Time pF 42 RESISTIVE SWITCHING Rise Time td(off) UNIT 2833 VGS = 0V 3 MAX µJ 476 VDD = 333V, VGS = 15V ID = 30A, RG = 5Ω 215 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 30 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -30A, dl S/dt = 100A/µs) 540 ns Q Reverse Recovery Charge (IS = -30A, dl S/dt = 100A/µs) 7.36 µC rr dv/ dt Peak Diode Recovery dv/ 120 (Body Diode) 1.3 (VGS = 0V, IS = -30A) dt Amps Volts 8 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.38 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 2.89mH, RG = 25Ω, Peak IL = 30A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -30A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.30 0.7 0.25 0.5 0.20 Note: 0.15 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7005 Rev C 11-2003 0.40 0.35 0.3 0.10 0.05 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 0 t1 t2 SINGLE PULSE 0.1 10-5 10-4 °C/W 40 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT5016BLL - SLL 80 8V 0.0174 Power (watts) 0.00401F 0.143 0.00641F 0.219 0.158F ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. (°C) 15 &10V 7.5V 60 7V 40 6.5V 20 6V 5.5V Case temperature. (°C) VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @