APT5024SLLG

APT5024BLL APT5024SLL 500V 22A 0.240Ω POWER MOS 7 R MOSFET BLL D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID SLL D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol TO-247 G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT5024BLL_SLL UNIT 500 Volts Drain-Source Voltage 22 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 265 Watts Linear Derating Factor 2.12 W/°C VGSM PD TJ,TSTG 88 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 22 (Repetitive and Non-Repetitive) EAR Volts 1 Amps 30 4 mJ 960 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 Volts 22 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 11A) TYP MAX 0.24 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 1-2005 BVDSS Characteristic / Test Conditions 050-7050 Rev C Symbol APT5024BLL_SLL DYNAMIC CHARACTERISTICS Test Conditions Characteristic Symbol MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 417 Crss Reverse Transfer Capacitance f = 1 MHz 27 VGS = 10V 43 VDD = 250V 12 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) ID = 22A @ 25°C tf 6 VDD = 250V RG = 1.6Ω Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 ns 18 ID = 22A @ 25°C Turn-off Delay Time nC 8 VGS = 15V Rise Time td(off) pF 24 RESISTIVE SWITCHING Turn-on Delay Time tr UNIT 1900 VGS = 0V 3 MAX 2 INDUCTIVE SWITCHING @ 25°C 167 VDD = 333V, VGS = 15V ID = 22A, RG = 5Ω 86 INDUCTIVE SWITCHING @ 125°C 262 VDD = 333V VGS = 15V µJ 99 ID = 22A, RG = 5Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID22A, dl S/dt = 100A/µs) Q rr Reverse Recovery Charge (IS = -ID22A, dl S/dt = 100A/µs) dv/ Peak Diode Recovery dv/ 88 (Body Diode) 1.3 (VGS = 0V, IS = -ID22A) dt MAX 22 IS dt TYP UNIT Amps Volts 516 ns 7 µC 5 8 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.47 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 40 4 Starting Tj = +25°C, L = 3.97mH, RG = 25Ω, Peak IL = 22A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID22A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.40 0.7 0.30 0.5 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7050 Rev C 1-2005 0.50 0.20 0.3 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0 t1 t2 0.10 0.05 10-5 SINGLE PULSE 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 Downloaded from Elcodis.com electronic components distributor °C/W 1.0 Typical Performance Curves APT5024BLL_SLL RC MODEL Junction temp. ( ”C) 0.205 0.00544F Power (Watts) 0.264 0.0981F ID, DRAIN CURRENT (AMPERES) 60 VGS=15 &10V 50 8V 40 7.5V 30 7V 20 6.5V 10 6V 5.5V Case temperature VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @