APT50GF120JRDQ3

APT50GF120JRDQ3 1200V TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 ® E E FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 20KHz • RBSOA and SCSOA Rated • Ultra Low Leakage Current C G ISOTOP ® 22 OT 7 S "UL Recognized" file # E145592 C • Ultrafast Soft Recovery Anti-parallel Diode G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT50GF120JRDQ3 VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 120 I C2 Continuous Collector Current @ TC = 100°C 64 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 225 Switching Safe Operating Area @ TJ = 150°C 225A @ 1200V Total Power Dissipation Watts 521 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 750µA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES MAX 5.5 6.5 2.5 3.0 Units 1200 (VCE = VGE, I C = 700µA, Tj = 25°C) 4.5 Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) TYP 3.1 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Volts 0.75 2 Gate-Emitter Leakage Current (VGE = ±20V) 5.5 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com mA nA 3-2006 V(BR)CES MIN Rev A Characteristic / Test Conditions 052-6283 Symbol DYNAMIC CHARACTERISTICS Symbol APT50GF120JRDQ3 Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) tr td(off) tf Eon1 tf 300 Gate Charge 10.0 VGE = 15V 495 TJ = 150°C, R G = 1.0Ω, VGE = 7965 TJ = +25°C 4340 36 VCC = 800V 70 Turn-off Delay Time VGE = 15V 410 RG = 1.0Ω 110 7890 I C = 75A Current Fall Time Eoff Turn-off Switching Energy µJ 9895 Inductive Switching (125°C) Current Rise Time Turn-on Switching Energy (Diode) ns 65 RG = 1.0Ω Turn-on Delay Time Turn-on Switching Energy nC 355 6 Eon2 V A 70 I C = 75A Eon1 pF 225 36 5 UNIT 290 VCC = 800V 4 MAX 50 Inductive Switching (25°C) Current Fall Time Turn-off Switching Energy td(off) f = 1 MHz 15V, L = 100µH,VCE = 1200V Turn-off Delay Time Eoff tr 555 VGE = 15V Turn-on Switching Energy (Diode) td(on) 5320 VGE = 0V, VCE = 25V I C = 75A Current Rise Time Eon2 TYP Capacitance VCE = 600V Turn-on Delay Time Turn-on Switching Energy MIN 44 55 TJ = +125°C ns µJ 14110 6 6040 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .24 RθJC Junction to Case (DIODE) .56 WT VIsolation Package Weight 29.2 RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 UNIT °C/W gm Volts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 052-6283 Rev A 3-2006 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES TJ = -55°C IC, COLLECTOR CURRENT (A) 120 TJ = 25°C 100 80 TJ = 125°C 60 40 20 0 IC, COLLECTOR CURRENT (A) 120 100 TJ = -55°C 80 60 TJ = 25°C 40 20 0 TJ = 125°C 0 12V 150 11V 10V 100 9V 50 8V FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST