APT50GF60JU2
ISOTOP® Boost chopper
NPT IGBT
VCES = 600V
IC = 50A @ Tc = 90°C
K
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
C
Features
G
Non Punch Through (NPT) THUNDERBOLT IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
E
K
E
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
C
G
ISOTOP
Absolute maximum ratings
Parameter
Collector - Emitter Breakdown Voltage
TC = 25°C
Max ratings
600
75
50
160
±20
277
ILM
RBSOA clamped Inductive load Current RG=11Ω
TC = 25°C
100
IFAV
Maximum Average Forward Current
TC = 80°C
30
IFRMS
RMS Forward Current (Square wave, 50% duty)
TC = 25°C
TC = 90°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Duty cycle=0.5
39
Unit
V
A
A
V
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
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1-9
APT50GF60JU2 – Rev 2 October, 2012
Symbol
VCES
IC1
IC2
ICM
VGE
PD
APT50GF60JU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Tj = 25°C
VGE = 0V
VCE = 600V
Tj = 125°C
T
VGE =15V
j = 25°C
IC = 50A
Tj = 125°C
VGE = VCE, IC = 700µA
VGE = ±20V, VCE = 0V
Min
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
4.5
Typ
2.1
2.2
5.5
Max
40
1000
2.7
2.8
6.5
±100
Unit
Max
Unit
µA
V
V
nA
Dynamic Characteristics
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Td(on)
Tr
Td(off)
Tf
Ets
Td(on)
Tr
Td(off)
Tf
Eon
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Eoff
Ets
VGS = 15V
VBus = 300V
IC = 50A
Resistive Switching (25°C)
VGE = 15V
VBus = 300V
IC = 50A
RG = 10
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 10
Typ
2250
255
155
175
18
100
29
118
150
pF
nC
ns
190
30
80
240
43
3.6
28
75
265
185
1.8
mJ
Turn-off Switching Energy
2.4
mJ
Total switching Losses
4.2
Inductive Switching (150°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 10
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ns
ns
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APT50GF60JU2 – Rev 2 October, 2012
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
APT50GF60JU2
Chopper diode ratings and characteristics
Symbol
VF
Characteristic
Diode Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance
Reverse Recovery Time
trr
Test Conditions
IF = 30A
IF = 60A
IF = 30A
VR = 600V
VR = 600V
VR = 200V
IF=1A,VR=30V
di/dt =100A/µs
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
23
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
85
160
4
8
130
700
70
1300
30
Reverse Recovery Time
IRRM
Qrr
trr
Qrr
IRRM
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
IF = 30A
VR = 400V
di/dt =1000A/µs
Min
Typ
1.6
1.9
1.4
Max
1.8
V
250
500
44
Tj = 125°C
Unit
µA
pF
ns
A
nC
ns
nC
A
Thermal and package characteristics
RthJC
Junction to Case Thermal Resistance
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Junction to Ambient (IGBT & Diode)
Min
Typ
IGBT
Diode
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
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2500
-55
Max
0.45
1.21
20
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
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APT50GF60JU2 – Rev 2 October, 2012
Symbol Characteristic
APT50GF60JU2
Typical IGBT Performance Curve
0.5
0.9
0.4
0.35
0.7
0.3
0.25
0.5
0.2
0.15
0.1
0.05
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
1
10
Figure 7, Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
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APT50GF60JU2 – Rev 2 October, 2012
Thermal Impedance (°C/W)
0.45
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APT50GF60JU2 – Rev 2 October, 2012
APT50GF60JU2
APT50GF60JU2
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APT50GF60JU2 – Rev 2 October, 2012
Typical Diode Performance Curve
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APT50GF60JU2 – Rev 2 October, 2012
APT50GF60JU2
APT50GF60JU2
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
Cathode
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
Collector
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Emitter
Gate
ISOTOP® is a registered trademark of ST Microelectronics NV
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APT50GF60JU2 – Rev 2 October, 2012
Dimensions in Millimeters and (Inches)
APT50GF60JU2
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APT50GF60JU2 – Rev 2 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.