APT50GN60BG

TYPICAL PERFORMANCE CURVES APT50GN60B APT50GN60B_S(G) APT50GN60S APT50GN60B(G) APT50GN60S(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. TO -2 D3PAK 47 (S) C G G C E E • 600V Field Stop • • • • Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability 175°C Rated C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT50GN60B(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current I C2 Continuous Collector Current @ TC = 110°C I CM Pulsed Collector Current SSOA PD TJ,TSTG TL 1 8 @ TC = 25°C UNIT Volts 107 64 Amps 150 @ TC = 175°C 150A @ 600V Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation 366 Operating and Storage Junction Temperature Range Watts -55 to 175 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) (VCE = VGE, I C = 800µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) I CES I GES RG(int) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) TYP MAX 5.0 5.8 6.5 1.05 1.45 1.85 25 2 600 N/A CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com µA TBD Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Volts 1.7 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Units nA Ω 7-2009 MIN Rev C Characteristic / Test Conditions 050-7612 Symbol DYNAMIC CHARACTERISTICS Symbol APT50GN60B_S(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Qgc SSOA SCSOA td(on) tr td(off) tf Eon1 Total Gate Charge 3200 VGE = 0V, VCE = 25V 125 f = 1 MHz 100 Gate Charge 9.0 VGE = 15V 325 VCE = 300V 25 I C = 50A Gate-Collector ("Miller ") Charge TJ = 175°C, R G = 4.3Ω Switching Safe Operating Area VGE = VCC = 360V, VGE = 15V, TJ = 150°C, R G = 4.3Ω 7 Current Rise Time 25 Turn-off Delay Time VGE = 15V 230 I C = 50A 100 RG = 4.3Ω 7 1185 TJ = +25°C 1275 Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy td(on) Turn-on Delay Time Inductive Switching (125°C) 20 tr Current Rise Time VCC = 400V 25 td(off) Turn-off Delay Time VGE = 15V 260 I C = 50A RG = 4.3Ω 7 140 1205 TJ = +125°C 1850 tf 6 44 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy ns µJ 1565 Current Fall Time Eon1 nC µs 20 5 V 6 VCC = 400V 4 pF A Inductive Switching (25°C) Turn-on Switching Energy UNIT 150 Turn-on Delay Time Current Fall Time MAX 175 7, 15V, L = 100µH,VCE = 600V Short Circuit Safe Operating Area TYP Capacitance 3 Gate-Emitter Charge MIN 55 66 ns µJ 2125 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .41 RθJC Junction to Case (DIODE) N/A WT Package Weight 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 050-7612 Rev C 7-2009 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) 8 Continuous current limited by package lead temperature. Microsemi reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT50GN60B_S(G) 200 160 = 15V TJ = 175°C 100 TJ = 125°C 80 TJ = 25°C 60 40 TJ = -55°C IC, COLLECTOR CURRENT (A) 12V 120 11V 100 80 10V 60 9V 40 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) 8V 250µs PULSE TEST