APT50GR120B2

APT50GR120B2_L APT50GR120B2 APT50GR120L 1200V, 50A, Vce(on) = 2.5V Typical Ultra Fast NPT - IGBT® The Ultra Fast NPT - IGBT® family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between conduction and switching losses. Features • Low Saturation Voltage • Short Circuit Withstand Rated • Low Tail Current • High Frequency Switching • RoHS Compliant • Ultra Low Leakage Current Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter Ratings Vces Collector Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 117 I C2 Continuous Collector Current @ TC = 110°C 50 I CM Pulsed Collector Current 200 SCWT PD TJ,TSTG TL 1 Unit V A Short Circuit Withstand Time: VCE = 600V, VGE = 15V, TC=125°C 10 μs Total Power Dissipation @ TC = 25°C 694 W Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Min V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) 1200 VGE(TH) Gate Threshold Voltage VCE(ON) I CES Typ Max 5.0 6.5 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) 2.5 3.2 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) 3.3 Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C) 3.5 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 10 (VCE = VGE, I C = 2.5mA, Tj = 25°C) 3.5 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) I GES 2 Unit Volts 1000 μA ±250 nA 100 Gate-Emitter Leakage Current (VGE = ±20V) Rev A CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 12-2012 Parameter Microsemi Website - http://www.microsemi.com 052-6405 Symbol DYNAMIC CHARACTERISTICS Symbol APT50GR120B2_L Parameter Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate to Emitter Plateau Voltage Qg Total Gate Charge 3 Gate-Emitter Charge Qgc Gate- Collector Charge td(off) tf 5550 500 f = 1MHz 145 Max V 330 445 52 72 IC = 50A 156 200 Inductive Switching (25°C) 28 Current Rise Time VCC = 600V 38 Turn-Off Delay Time VGE = 15V 237 45 IC = 50A Turn-On Switching Energy RG = 4.3 Ω 2135 3200 Turn-Off Switching Energy TJ = +25°C 1478 2210 td(on) Turn-On Delay Time tr td(off) Eon2 4 Inductive Switching (125°C) 28 Current Rise Time VCC = 600V 38 Turn-Off Delay Time VGE = 15V 270 Current Fall Time tf nC ns Eoff 6 5 Unit pF 7.5 VCE= 600V Current Fall Time Eon2 Capacitance VGE = 0V, VCE = 25V Gate Charge Turn-On Delay Time tr Typ VGE = 15V Qge td(on) Min μJ ns 54 IC = 50A 5 Turn-On Switching Energy RG = 4.3 Ω Eoff 6 Turn-Off Switching Energy TJ = +125°C 4 3157 4765 1884 2820 Typ Max μJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min RθJC Junction to Case Thermal Resistance (IGBT) .18 RθJA Junction to Ambient Thermal Resistance 40 B2 WT Package Weight L Unit °C/W .22 oz 6 g .36 oz 10 g 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 052-6405 D = 0.9 0.16 0.7 0.12 0.5 Note: 0.08 P DM ZθJC, THERMAL IMPEDANCE (°C/W) Rev A 12-2012 0.20 0.3 t1 t2 0.04 t 0.1 0.05 SINGLE PULSE 0 10 -5 10 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 10-2 10-3 0.1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration -4 1 TYPICAL PERFORMANCE CURVES APT50GR120B2_L 160 250 V 140 IC, COLLECTOR CURRENT (A) 100 80 60 40 20 60 80 100 IC(A) FIGURE 2, Max Frequency vs Current (Tcase = 75°C) 300 15V 13V 20 9V 200 8.5V 150 8.0V 100 7.5V 50 7V 6.5V 0 5 10 15 20 25 30 100 50 0 2 4 6 8 10 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Saturation Voltage Characteristics (TJ = 25°C) 5 IC = 100A 4 IC = 50A 3 IC = 25A 2 1 VGE = 15V. 250μs PULSE TEST