APT50GR120B2_L
APT50GR120B2
APT50GR120L
1200V, 50A, Vce(on) = 2.5V Typical
Ultra Fast NPT - IGBT®
The Ultra Fast NPT - IGBT® family of products is the newest generation of planar
IGBTs optimized for outstanding ruggedness and the best trade-off between
conduction and switching losses.
Features
• Low Saturation Voltage
• Short Circuit Withstand Rated
• Low Tail Current
• High Frequency Switching
• RoHS Compliant
• Ultra Low Leakage Current
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for
applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power
supplies (UPS).
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
Parameter
Ratings
Vces
Collector Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
117
I C2
Continuous Collector Current @ TC = 110°C
50
I CM
Pulsed Collector Current
200
SCWT
PD
TJ,TSTG
TL
1
Unit
V
A
Short Circuit Withstand Time: VCE = 600V, VGE = 15V, TC=125°C
10
μs
Total Power Dissipation @ TC = 25°C
694
W
Operating and Storage Junction Temperature Range
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Min
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA)
1200
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
Typ
Max
5.0
6.5
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C)
2.5
3.2
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C)
3.3
Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C)
3.5
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
10
(VCE = VGE, I C = 2.5mA, Tj = 25°C)
3.5
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
I GES
2
Unit
Volts
1000
μA
±250
nA
100
Gate-Emitter Leakage Current (VGE = ±20V)
Rev A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
12-2012
Parameter
Microsemi Website - http://www.microsemi.com
052-6405
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT50GR120B2_L
Parameter
Test Conditions
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate to Emitter Plateau Voltage
Qg
Total Gate Charge
3
Gate-Emitter Charge
Qgc
Gate- Collector Charge
td(off)
tf
5550
500
f = 1MHz
145
Max
V
330
445
52
72
IC = 50A
156
200
Inductive Switching (25°C)
28
Current Rise Time
VCC = 600V
38
Turn-Off Delay Time
VGE = 15V
237
45
IC = 50A
Turn-On Switching Energy
RG = 4.3 Ω
2135
3200
Turn-Off Switching Energy
TJ = +25°C
1478
2210
td(on)
Turn-On Delay Time
tr
td(off)
Eon2
4
Inductive Switching (125°C)
28
Current Rise Time
VCC = 600V
38
Turn-Off Delay Time
VGE = 15V
270
Current Fall Time
tf
nC
ns
Eoff 6
5
Unit
pF
7.5
VCE= 600V
Current Fall Time
Eon2
Capacitance
VGE = 0V, VCE = 25V
Gate Charge
Turn-On Delay Time
tr
Typ
VGE = 15V
Qge
td(on)
Min
μJ
ns
54
IC = 50A
5
Turn-On Switching Energy
RG = 4.3 Ω
Eoff 6
Turn-Off Switching Energy
TJ = +125°C
4
3157
4765
1884
2820
Typ
Max
μJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
Min
RθJC
Junction to Case Thermal Resistance (IGBT)
.18
RθJA
Junction to Ambient Thermal Resistance
40
B2
WT
Package Weight
L
Unit
°C/W
.22
oz
6
g
.36
oz
10
g
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
3 See Mil-Std-750 Method 3471.
4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the
clamping diode.
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6405
D = 0.9
0.16
0.7
0.12
0.5
Note:
0.08
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
Rev A
12-2012
0.20
0.3
t1
t2
0.04
t
0.1
0.05
SINGLE PULSE
0
10
-5
10
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
10-2
10-3
0.1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
-4
1
TYPICAL PERFORMANCE CURVES
APT50GR120B2_L
160
250
V
140
IC, COLLECTOR CURRENT (A)
100
80
60
40
20
60
80
100
IC(A)
FIGURE 2, Max Frequency vs Current (Tcase = 75°C)
300
15V
13V
20
9V
200
8.5V
150
8.0V
100
7.5V
50
7V
6.5V
0
5
10
15
20
25
30
100
50
0
2
4
6
8
10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Saturation Voltage Characteristics (TJ = 25°C)
5
IC = 100A
4
IC = 50A
3
IC = 25A
2
1
VGE = 15V.
250μs PULSE TEST
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