APT50GS60BRDQ2G

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. TO -24 7 An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode. D 3 PAK APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) Features Typical Applications • Fast Switching with low EMI • ZVS Phase Shifted and other Full Bridge • Very Low EOFF for Maximum Efficiency • Half Bridge • Short circuit rated • High Power PFC Boost • Low Gate Charge • Welding • Tight parameter distribution • Induction heating • Easy paralleling • High Frequency SMPS Single die IGBT with separate DQ diode die • RoHS Compliant Absolute Maximum Ratings Symbol Parameter Rating I C1 Continuous Collector Current TC = @ 25°C 93 I C1 Continuous Collector Current TC = @ 100°C 50 I CM Pulsed Collector Current 1 195 VGE Gate-Emitter Voltage Unit A ±30V V SSOA Switching Safe Operating Area 195 EAS Single Pulse Avalanche Energy 20 mJ tSC Short Circut Withstand Time 3 10 μs IF Diode Continuous Forward Current I FRM TC = 25°C 90 TC = 100°C 55 Diode Max. Repetitive Forward Current A 195 Thermal and Mechanical Characteristics Min Junction to Case Thermal Resistance RθCS Case to Sink Thermal Resistance, Flat Greased Surface Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Unit 415 W IGBT 0.30 Diode 0.67 Operating and Storage Junction Temperature Range TL Max Mounting Torque (TO-247), 6-32 M3 Screw 0.11 -55 150 300 °C 0.22 oz 5.9 g 10 in·lbf 1.1 N·m CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed. Microsemi Website - http://www.microsemi.com °C/W 3-2012 RθJC Typ Rev B Total Power Dissipation TC = @ 25°C TJ, TSTG Parameter 052-6300 Symbol PD Static Characteristics Symbol VBR(CES) ∆VBR(CES)/∆TJ VCE(ON) VEC Parameter Collector-Emitter Breakdown Voltage Breakdown Voltage Temperature Coeff Collector-Emitter On Voltage 3 Diode Forward Voltage 3 Gate-Emitter Threshold Voltage ∆VGE(th)/∆TJ Threshold Voltage Temp Coeff ICES Zero Gate Voltage Collector Current IGES Gate-Emitter Leakage Current Symbol gfs Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Co(cr) Reverse Transfer Capacitance Charge Related 4 Co(er) Reverse Transfer Capacitance Current Related 5 Gate-Emitter Charge Ggc Gate-Collector Charge td(on) Turn-On Delay Time tr td(off) tf 3-2012 Rise Time 0.60 2.8 TJ = 25°C 2.15 TJ = 125°C VCE = 600V, VGE = 0V Unit V 3.25 V/°C 3.15 V 1.8 3 4 5 6.7 mV/°C TJ = 25°C 50 TJ = 125°C 1000 VGE = ±20V VGE = 0V, VCE = 25V f = 1MHz VGE = 0V VCE = 0 to 400V Inductive Switching IGBT and Diode: Turn-Off Delay Time Fall Time Turn-On Switching Energy Eon2 Turn-On Switching Energy 8 Eoff Turn-Off Switching Energy 9 td(on) Turn-On Delay Time tf 600 TJ = 125°C VGE = VCE, IC = 1mA Max μA ±100 nA Min Typ Max Unit 31 S 2635 240 145 pF 115 85 235 18 nC 100 16 7 td(off) VGE = 15V IC = 50A Typ TJ = 25°C VGE = 0 to 15V IC = 50A, VCE = 300V Eon1 tr Rev B Forward Transconductance Total Gate Charge Min Reference to 25°C, IC = 2.0mA Test Conditions VCE = 50V, IC = 50A Cies Qg APT50GS60B_SRDQ2(G) TJ = 25°C unless otherwise specified Parameter Qge Test Conditions VGE = 0V, IC = 2.0mA IC = 50A VGE(th) Dynamic Characteristics 052-6300 TJ = 25°C unless otherwise specified TJ = 25°C, VCC = 400V, IC = 50A RG = 4.7Ω 6, VGG = 15V 33 225 ns 37 TBD 1.2 mJ 0.755 33 Inductive Switching IGBT and Diode: Rise Time Turn-Off Delay Time Fall Time Eon1 Turn-On Switching Energy 7 Eon2 Turn-On Switching Energy 8 Eoff Turn-Off Switching Energy 9 trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge Irrm Peak Reverse Recovery Current TJ = 125°C, VCC = 400V, IC = 50A RG = 4.7Ω 6, VGG = 15V 33 250 ns 23 TBD 1.7 mJ 0.950 IF = 50A VR = 400V diF/dt = 200A/μs 25 ns 35 nC 3 A TYPICAL PERFORMANCE CURVES APT50GS60B_SRDQ2(G) 250 VGE = 15V T = 125°C J 125 IC, COLLECTOR CURRENT (A) 100 75 TJ = 25°C 50 TJ = 125°C TJ = 150°C 125 100 75 0 TJ = 25°C TJ = 125°C 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) VGE = 15V. 250μs PULSE TEST