APT50GS60BRG

APT50GS60BR(G) APT50GS60SR(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt® High Speed NPT IGBT The Thunderbolt HS™ series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10µs make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode. TO -2 47 D3PAK APT50GS60BR(G) Features Typical Applications • Fast Switching with low EMI • ZVS Phase Shifted and other Full Bridge • Very Low EOFF for Maximum Efficiency • Half Bridge • Short circuit rated • High Power PFC Boost • Low Gate Charge • Welding • Tight parameter distribution • Induction heating • Easy paralleling • High Frequency SMPS APT50GS60SR(G) C G E • RoHS Compliant Absolute Maximum Ratings Symbol Parameter Rating I C1 Continuous Collector Current TC = @ 25°C 93 I C1 Continuous Collector Current TC = @ 100°C 50 I CM Pulsed Collector Current 1 195 VGE Gate-Emitter Voltage SSOA Unit A ±30V V Switching Safe Operating Area 195 EAS Single Pulse Avalanche Energy 2 280 mJ tSC Short Circut Withstand Time 3 10 µs Thermal and Mechanical Characteristics TJ, TSTG Junction to Case Thermal Resistance Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque IGBT Case to Sink Thermal Resistance, Flat Greased Surface Mounting Torque (TO-247), 6-32 M3 Screw Typ Max Unit - - 415 W - - 0.30 - 0.11 - -55 - 150 - - 300 - 0.22 - oz - 5.9 - g - - 10 in·lbf - - 1.1 N·m CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed. Microsemi Website - http://www.microsemi.com °C/W °C 8-2007 RθCS Total Power Dissipation TC = @ 25°C Min Rev A RθJC Parameter 052-6301 Symbol PD Static Characteristics Symbol VBR(CES) Parameter VBR(ECS) TJ = 25°C unless otherwise specified Min Typ Max Collector-Emitter Breakdown Voltage Test Conditions VGE = 0V, IC = 250µA 600 - - Emitter-Collector Breakdown Voltage VGE = 0V, IC = 1A - 25 - Reference to 25°C, IC = 250µA - 0.60 - TJ = 25°C - 2.8 3.15 TJ = 125°C - 3.25 - TJ = 25°C - 2.15 - ∆VBR(CES)/∆TJ Breakdown Voltage Temperature Coeff VCE(ON) VEC VGE(th) Collector-Emitter On Voltage 4 Diode Forward Voltage 4 Gate-Emitter Threshold Voltage ICES Zero Gate Voltage Collector Current IGES Gate-Emitter Leakage Current Dynamic Characteristics Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Co(cr) Reverse Transfer Capacitance Charge Related 5 Co(er) Reverse Transfer Capacitance Current Related 6 Qg Total Gate Charge Gate-Emitter Charge Ggc Gate-Collector Charge td(on) Turn-On Delay Time td(off) tf Turn-On Switching Energy Turn-On Switching Energy 9 Eoff Turn-Off Switching Energy 10 td(on) Turn-On Delay Time Eon1 8-2007 Fall Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy 8 Eon2 Turn-On Switching Energy 9 Eoff Turn-Off Switching Energy 10 1.8 - 4 5 - V V/°C V - 6.7 - - 50 TJ = 125°C - - TBD - - ±100 nA Min Typ Max Unit - 31 - S - 2635 - - 240 - - 145 - - 115 - VGE = ±20V VGE = 0V, VCE = 25V f = 1MHz VGE = 0V VCE = 0 to 400V Inductive Switching IGBT and Diode: Turn-Off Delay Time Eon2 tf Rev A Rise Time 8 td(off) VCE = 600V, VGE = 0V 3 Unit TJ = 25°C VGE = 0 to 15V IC = 50A, VCE = 300V Eon1 tr VGE = VCE, IC = 1mA Test Conditions VCE = 50V, IC = 50A Forward Transconductance Qge TJ = 125°C TJ = 25°C unless otherwise specified Cies tr 052-6301 Parameter VGE = 15V IC = 50A IC = 50A ∆VGE(th)/∆TJ Threshold Voltage Temp Coeff Symbols gfs APT50GS60B_SR(G) TJ = 25°C, VCC = 400V, IC = 50A RG = 4.7Ω 7, VGG = 15V mV/°C µA pF 85 - 235 - - 18 - - 100 - - 16 - - 33 - - 225 - - 37 - - TBD - - 1.2 - - 0.755 - - 33 - Inductive Switching IGBT and Diode: - 33 - - 250 - TJ = 125°C, VCC = 400V, IC = 50A RG = 4.7Ω 7, VGG = 15V - 23 - - TBD - - 1.7 - - 0.950 - nC ns mJ ns mJ TYPICAL PERFORMANCE CURVES APT50GS60B_SR(G) 250 VGE = 15V T = 125°C J 125 IC, COLLECTOR CURRENT (A) 100 75 TJ = 25°C 50 TJ = 125°C TJ = 150°C 125 100 75 0 TJ = 25°C TJ = 125°C 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) 4 IC = 50A 3 IC = 25A 2 1 0 7V 50 6V 6 TJ = 25°C. 250µs PULSE TEST