APT50GT120B2R(G)
APT50GT120LR(G)
1200V, 50A, VCE(ON) = 3.2V Typical
Thunderbolt IGBT®
The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using
Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
Features
• Low Forward Voltage Drop
• RBSOA and SCSOA Rated
• Low Tail Current
• High Frequency Switching to 50KHz
• RoHS Compliant
• Ultra Low Leakage Current
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel
IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
All Ratings: TC = 25°C unless otherwise specified.
Maximum Ratings
Symbol Parameter
Ratings
VCES
Collector-Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
IC1
Continuous Collector Current @ TC = 25°C
94
IC2
Continuous Collector Current @ TC = 100°C
50
ICM
SSOA
PD
TJ, TSTG
TL
Pulsed Collector Current
Unit
Volts
Amps
150
1
Switching Safe Operating Area @ TJ = 150°C
150A @ 1200V
Total Power Dissipation
625
Operating and Storage Junction Temperature Range
Watts
-55 to 150
Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec.
°C
300
Static Electrical Characteristics
Min
Typ
Max
1200
-
-
Unit
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 3mA)
VGE(TH)
Gate Threshold Voltage (VCE = VGE, IC = 2mA, Tj = 25°C)
4.5
5.5
6.5
Collector Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
2.7
3.2
3.7
Collector Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
-
4.0
-
-
-
200
μA
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
-
-
2.0
mA
Gate-Emitter Leakage Current (VGE = ±20V)
-
-
300
nA
VCE(ON)
ICES
IGES
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Downloaded from Elcodis.com electronic components distributor
Volts
052-6270 Rev D 9-2008
Symbol Characteristic / Test Conditions
Dynamic Characteristics
Symbol
APT50GT120B2R_LR(G)
Characteristic
Test Conditions
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
VGE = 0V, VCE = 25V
f = 1MHz
Gate Charge
Min
Typ
Max
-
3300
-
-
500
-
-
220
-
-
10.5
-
Qg
Total Gate Charge
VGE = 15V
-
340
-
Qge
Gate-Emitter Charge
VCE= 600V
-
40
-
IC = 50A
-
210
-
Qgc
SSOA
td(on)
tr
td(off)
tf
Eon1
Gate-Collector Charge
Switching Safe Operating Area
TJ = 150°C, RG = 1.0Ω , VGE = 15V,
L = 100μH, VCE= 1200V
Turn-On Delay Time
-
24
-
Inductive Switching (25°C)
-
53
-
Turn-Off Delay Time
VCC = 800V
230
-
Current Fall Time
VGE = 15V
-
26
-
RG = 4.7Ω
-
TBD
-
TJ = +25°C
-
5330
-
Current Rise Time
IC = 50A
Eon2
Turn-On Switching Energy
Eoff
Turn-Off Switching Energy 6
-
2330
-
td(on)
Turn-On Delay Time
-
24
-
Inductive Switching (125°C)
-
53
-
Turn-Off Delay Time
VCC = 800V
-
255
-
Current Fall Time
VGE = 15V
-
48
-
Turn-On Switching Energy
4
IC = 50A
TBD
-
Turn-On Switching Energy
RG = 4.7Ω
-
5
-
5670
-
Turn-Off Switching Energy
6
-
2850
-
Eon1
Eon2
Eoff
nC
A
5
tf
V
150
Turn-On Switching Energy
td(off)
pF
7
4
tr
Unit
Current Rise Time
TJ = 125°C
ns
μJ
ns
μJ
Thermal and Mechanical Characteristics
Symbol Characteristic / Test Conditions
R
θJC
WT
Min
Typ
Max
Unit
Junction to Case
-
-
0.20
°C/W
Package Weight
-
-
5.9
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance not including gate driver impedance.
052-6270 Rev D 9-2008
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Downloaded from Elcodis.com electronic components distributor
Typical Performance Curves
V
GE
APT50GT120B2R_LR(G)
150
= 15V
125
TJ= 55°C
100
75
TJ= 125°C
50
TJ= 150°C
25
0
VGE, GATE-TO-EMITTER VOLTAGE (V)
100
75
TJ= -55°C
TJ= 25°C
TJ= 125°C
0
6
IC = 100A
4
3
IC = 50A
IC = 25A
2
1
0
8
9
10 11 12 13 14 15 16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.10
8V
25
7V
6V
0
10
15
20
25
30
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 25°C)
I = 50A
C
T = 25°C
VCE = 240V
J
14
VCE = 600V
12
10
VCE = 960V
8
6
4
2
0
7
50
100 150 200 250 300
GATE CHARGE (nC)
FIGURE 4, Gate charge
350
VGE = 15V.
250μs PULSE TEST
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