APT50GT120JRDQ2

APT50GT120JRDQ2 1200V TYPICAL PERFORMANCE CURVES APT50GT120JRDQ2 ® • Low Forward Voltage Drop • High Freq. Switching to 50KHz • Low Tail Current • Ultra Low Leakage Current ISOTOP ® APT50GT120JRDQ2 Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 72 I C2 Continuous Collector Current @ TC = 110°C 32 PD TJ,TSTG TL "UL Recognized" file # E145592 All Ratings: TC = 25°C unless otherwise specified. VCES SSOA 7 E Parameter Pulsed Collector Current 22 G • Intergrated Gate Resistor: Low EMI, High Reliability I CM S OT C • RBSOA and SCSOA Rated Symbol C G The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. MAXIMUM RATINGS E E Thunderbolt IGBT® 1 UNIT Volts Amps 150 150A @ 1200V Switching Safe Operating Area @ TJ = 150°C Watts 379 Total Power Dissipation Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 3mA) VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES RG(int) MAX 4.5 5.5 6.5 2.7 3.2 3.7 Units 1200 (VCE = VGE, I C = 2mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) TYP 4.0 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Volts 400 2 Gate-Emitter Leakage Current (VGE = ±20V) 300 5 Intergrated Gate Resistor CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA TBD nA Ω 9-2005 V(BR)CES MIN Rev A Characteristic / Test Conditions 052-6278 Symbol DYNAMIC CHARACTERISTICS Symbol APT50GT120JRDQ2 Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA td(on) tr td(off) tf Eon1 155 Gate Charge 7.5 VGE = 15V 240 VGE = 3585 TJ = +25°C 1910 23 VCC = 800V 50 Turn-off Delay Time VGE = 15V 255 RG = 1.0Ω 7 50 3580 I C = 50A Current Fall Time Eoff Turn-off Switching Energy µJ 4835 Inductive Switching (125°C) Current Rise Time Turn-on Switching Energy (Diode) ns 26 RG = 1.0Ω 7 Turn-on Delay Time Turn-on Switching Energy nC 215 6 Eon2 V A 50 I C = 50A Eon1 pF 150 VCC = 800V 5 UNIT 110 7, 23 4 MAX 20 Inductive Switching (25°C) Current Fall Time Turn-off Switching Energy tf f = 1 MHz 15V, L = 100µH, VCE = 1200V Turn-off Delay Time Eoff td(off) 250 VGE = 15V Turn-on Switching Energy (Diode) tr VGE = 0V, VCE = 25V TJ = 150°C, R G = 1.0Ω Current Rise Time Eon2 td(on) 2500 I C = 50A Turn-on Delay Time TYP Capacitance VCE = 600V Switching Safe Operating Area Turn-on Switching Energy MIN 44 55 TJ = +125°C ns µJ 6970 6 2750 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .33 RθJC Junction to Case (DIODE) 1.1 WT VIsolation Package Weight 29.2 RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 UNIT °C/W gm Volts 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 052-6278 Rev A 9-2005 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES = 15V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 100 80 TJ = 25°C 60 TJ = 125°C 40 20 FIGURE 1, Output Characteristics(TJ = 25°C) 100 80 TJ = -55°C 60 TJ = 25°C 40 TJ = 125°C 20 0 0 100 12V 75 11V 50 10V 9V 8V 25 FIGURE 2, Output Characteristics (TJ = 125°C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 120 13V 7V 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 1 2 3 4 5 6 7 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST