APT50GT60BRDQ2G

TYPICAL PERFORMANCE CURVES APT50GT60BRDQ2(G) 600V APT50GT60BRDQ2 APT50GT60BRDQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 4 7 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 100KHz • Low Tail Current • Ultra Low Leakage Current G C E C • RBSOA and SCSOA Rated G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT50GT60BRDQ2(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current I C2 Continuous Collector Current @ TC = 110°C I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 7 @ TC = 25°C UNIT Volts 110 52 Amps 150 @ TC = 150°C 150A @ 600V Switching Safe Operating Area @ TJ = 150°C Watts 446 Total Power Dissipation Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES (VCE = VGE, I C = 1mA, Tj = 25°C) 3 TYP 4 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) 1.7 2.0 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) 2.2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) MAX 5 Volts 2.5 50 TBD 120 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Units µA nA 6-2008 MIN Rev C Characteristic / Test Conditions 052-6272 Symbol DYNAMIC CHARACTERISTICS Symbol APT50GT60BRDQ2(G) Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Total Gate Charge 3 Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) Turn-on Delay Time tr Current Rise Time td(off) Turn-off Delay Time tf Eon1 Capacitance 2660 VGE = 0V, VCE = 25V 250 f = 1 MHz 153 Gate Charge 7.5 VGE = 15V 240 VCE = 300V 20 110 I C = 50A I C = 50A Current Fall Time Turn-on Switching Energy Turn-off Switching Energy td(on) Turn-on Delay Time tr Current Rise Time RG = 5Ω 4 Eoff TJ = +25°C 5 6 VGE = 15V Turn-off Delay Time I C = 50A Current Fall Time Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy RG = 5Ω 44 55 TJ = +125°C 6 UNIT pF V nC A 14 32 240 36 995 1110 1070 Inductive Switching (125°C) VCC = 400V Eon1 MAX TJ = 150°C, R G = 5Ω, VGE = 150 15V, L = 100µH,VCE = 600V VGE = 15V Turn-on Switching Energy (Diode) tf TYP Inductive Switching (25°C) VCC = 400V Eon2 td(off) MIN Test Conditions Characteristic ns µJ 14 32 270 95 1035 1655 1505 ns µJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case (IGBT) .28 RθJC Junction to Case (DIODE) 5.9 .67 WT Package Weight TYP MAX UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 052-6272 Rev C 6-2008 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES = 15V TJ = 25°C TJ = -55°C 80 TJ = 125°C 60 40 10 FIGURE 1, Output Characteristics(TJ = 25°C) 250µs PULSE TEST