APT50GT60BRG

TYPICAL PERFORMANCE CURVES 600V APT50GT60BR_SR(G) APT50GT60BR APT50GT60SR APT50GT60BRG* APT50GT60SRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® (B) TO • High Freq. Switching to 100KHz • Low Tail Current • Ultra Low Leakage Current D 3 PA K 47 (S) The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop -2 C G G C E E C • RBSOA and SCSOA Rated G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT50GT60BR_SR(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current I C2 Continuous Collector Current @ TC = 110°C I CM SSOA PD Pulsed Collector Current 7 @ TC = 25°C TL Volts 110 52 1 Amps 150 150A @ 600V Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation TJ,TSTG UNIT Watts 446 Operating and Storage Junction Temperature Range -55 to 150 °C Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions MIN V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) 600 VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) VCE(ON) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) I CES Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) MAX 3 4 5 1.7 2.0 2.5 25 2 Gate-Emitter Leakage Current (VGE = ±20V) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. MicrosemiWebsite-http://www.microsemi.com Units Volts 2.2 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) I GES TYP μA TBD 120 nA 052-6273 Rev D 3-2012 Symbol DYNAMIC CHARACTERISTICS Symbol APT50GT60BR_SR(G) Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Total Gate Charge SSOA Switching Safe Operating Area td(on) Turn-on Delay Time tr td(off ) tf Eon1 153 Gate Charge 7.5 VGE = 15V 240 VCE = 300V 20 I C = 50A 110 TJ = 150°C, R G = 4.3Ω, VGE = 15V, L = 100μH,VCE = 600V 32 Turn-off Delay Time 240 Current Fall Time I C = 50A 36 Turn-on Switching Energy RG = 4.3Ω 995 TJ = +25°C 5 14 Current Rise Time VCC = 400V 32 Turn-off Delay Time VGE = 15V 270 Turn-on Delay Time I C = 50A Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy nC ns μJ 55 ns 95 1035 RG = 4.3Ω 44 Eon2 V 1070 Inductive Switching (125°C) Eon1 pF 1110 6 UNIT A VGE = 15V 4 MAX 150 Current Rise Time Turn-off Switching Energy tf f = 1 MHz 14 Eoff td(off ) 250 VCC = 400V Turn-on Switching Energy (Diode) tr VGE = 0V, VCE = 25V Inductive Switching (25°C) Eon2 td(on) 2660 Gate-Emitter Charge Gate-Collector ("Miller ") Charge TYP Capacitance 3 Qgc MIN TJ = +125°C μJ 1655 6 1505 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .28 RθJC Junction to Case (DIODE) N/A WT Package Weight 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 052-6273 Rev D 3-2012 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature. Microsemi reserves the right to change, without notice, the specifications and information contained herein. UNIT °C/W gm TYPICAL PERFORMANCE CURVES APT50GT60BR_SR(G) 200 160 V GE 180 IC, COLLECTOR CURRENT (A) TJ = 25°C 100 TJ = -55°C 80 TJ = 125°C 60 40 10 11V 160 10V 140 120 9V 100 80 8V 60 40 7V 20 0 1 2 3 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 0 5 6V 0 FIGURE 1, Output Characteristics(TJ = 25°C) 160 VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) I = 50A C T = 25°C J 14 TJ = -55°C 100 80 60 TJ = 25°C 40 TJ = 125°C 20 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) VCE = 120V 12 VCE = 300V 10 VCE = 480V 8 6 4 2 0 12 0 50 FIGURE 3, Transfer Characteristics TJ = 25°C. 250μs PULSE TEST