APT50M38JLL

APT50M38JLL 500V 88A 0.038Ω POWER MOS 7 R MOSFET ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS Symbol S S G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT50M38JLL UNIT 500 Volts Drain-Source Voltage 88 Continuous Drain Current @ TC = 25°C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 694 Watts Linear Derating Factor 5.56 W/°C PD TJ,TSTG 1 352 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 88 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 50 4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 44A) TYP MAX Volts 0.038 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 4-2004 Characteristic / Test Conditions 050-7020 Rev D Symbol DYNAMIC CHARACTERISTICS Symbol APT50M38JLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 2540 Reverse Transfer Capacitance f = 1 MHz 125 VGS = 10V 270 VDD = 250V 70 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr ID = 88A @ 25°C td(off) tf 22 VDD = 250V RG = 0.6Ω Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 4 INDUCTIVE SWITCHING @ 25°C 6 1295 VDD = 333V, VGS = 15V 6 ns 50 ID = 88A @ 25°C Fall Time nC 17 VGS = 15V Turn-off Delay Time pF 140 RESISTIVE SWITCHING Rise Time UNIT 12000 VGS = 0V 3 MAX ID = 88A, RG = 5Ω 940 INDUCTIVE SWITCHING @ 125°C 1875 VDD = 333V VGS = 15V ID = 88A, RG = 5Ω µJ 1165 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 TYP 88 352 (Body Diode) 1.3 (VGS = 0V, IS = -88A) t rr Reverse Recovery Time (IS = -88A, dl S/dt = 100A/µs) 880 Q rr Reverse Recovery Charge (IS = -88A, dlS/dt = 100A/µs) 31.0 dv/ Peak Diode Recovery dt MAX UNIT Amps Volts ns µC 8 V/ns MAX UNIT dv/ 5 dt THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient MIN TYP 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 0.93mH, R = 25Ω, Peak I = 88A j G L 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID88A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.18 0.9 0.14 0.7 0.12 0.10 0.5 Note: 0.08 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7020 Rev D 4-2004 0.20 0.16 0.3 0.06 t2 0.1 0.02 0 Peak TJ = PDM x ZθJC + TC 0.05 10-5 t1 Duty Factor D = t1/t2 0.04 SINGLE PULSE 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 10 Typical Performance Curves APT50M38JLL 300 15 &10V 0.0244 Power (Watts) 0.0731F 0.133 0.701F 0.0218 20.1F ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. ( ”C) 8V 250 7.5V 200 7V 150 6.5V 100 6V 50 Case temperature 5.5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @