APT50M50JLL

APT50M50JLL 500V 71A 0.050Ω POWER MOS 7 R MOSFET ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg 27 2 T- D G SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS Symbol S S G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT50M50JLL UNIT Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25°C 71 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 595 Watts Linear Derating Factor 4.76 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 284 -55 to 150 °C 300 Amps 71 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 3200 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 35.5A) TYP MAX Volts 0.050 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 3-2004 Characteristic / Test Conditions 050-7116 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT50M50JLL Test Conditions Characteristic MIN TYP C iss Input Capacitance Coss Output Capacitance VDS = 25V 2060 Reverse Transfer Capacitance f = 1 MHz 105 VGS = 10V 200 VDD = 250V 50 C rss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr ID = 71A @ 25°C tf 18 VDD = 250V RG = 1.6Ω Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 6 ns 55 ID = 71A @ 25°C Fall Time nC 24 VGS = 15V Turn-off Delay Time pF 105 RESISTIVE SWITCHING Rise Time td(off) UNIT 10550 VGS = 0V 3 MAX 10 INDUCTIVE SWITCHING @ 25°C 1000 VDD = 333V, VGS = 15V ID = 71A, RG = 3Ω 1040 INDUCTIVE SWITCHING @ 125°C 1580 VDD = 333V VGS = 15V µJ 1160 ID = 71A, RG = 3Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 71 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID71A, dl S /dt = 100A/µs) 680 ns Q rr Reverse Recovery Charge (IS = -ID71A, dl S/dt = 100A/µs) 17.0 µC dv/ Peak Diode Recovery dt dv/ 284 (Body Diode) 1.3 (VGS = 0V, IS = -ID71A) dt Amps Volts 8 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient MIN TYP 0.21 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 1.27mH, RG = 25Ω, Peak IL = 71A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -71A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.7 0.15 Note: 0.5 0.10 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7116 Rev B 3-2004 0.25 0.20 0.3 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0 0.05 10-5 t1 t2 0.05 SINGLE PULSE 10-4 °C/W 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves 200 RC MODEL 0.142 0.0189 0.0273F 0.469F 44.2F Case temperature ID, DRAIN CURRENT (AMPERES) Power (Watts) 15 &10V 7.5V 180 Junction temp. ( ”C) 0.0492 APT50M50JLL 160 7V 140 120 6.5V 100 80 6V 60 40 5.5V 20 5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 180 VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @